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AM29PDL129H ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 4 Page - Advanced Micro Devices

๋ถ€ํ’ˆ๋ช… AM29PDL129H
์ƒ์„ธ๋‚ด์šฉ  128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO
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์ œ์กฐ์‚ฌ  AMD [Advanced Micro Devices]
ํ™ˆํŽ˜์ด์ง€  http://www.amd.com
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Am29PDL129H
November 2, 2005
GENERAL DESCRIPTION
The Am29PDL129H is a 128 Mbit, 3.0 volt-only Page Mode
and Simultaneous Read/Write Flash memory device orga-
nized as 8 Mwords. The device is offered in an 80-ball Fine-
pitch BGA package, and various multi-chip packages. The
word-wide data (x16) appears on DQ15-DQ0. This device
can be programmed in-system or in standard EPROM pro-
grammers. A 12.0 V VPP is not required for write or erase op-
erations.
The device offers fast page access times of 20 to 30 ns, with
corresponding random access times of 55 to 85 ns, respec-
tively, allowing high speed microprocessors to operate with-
out wait states. To eliminate bus contention the device has
separate chip enable (CE1#, CE2#), write enable (WE#) and
output enable (OE#) controls. Dual Chip Enables allow ac-
cess to two 64 Mbit partitions of the 128 Mbit memory space.
Simultaneous Read/Write Operation with
Zero Latency
The Simultaneous Read/Write architecture provides simul-
taneous operation by dividing the memory space into 4
banks, which can be considered to be four separate memory
arrays as far as certain operations are concerned. The de-
vice can improve overall system performance by allowing a
host system to program or erase in one bank, then immedi-
ately and simultaneously read from another bank with zero
latency (with two simultaneous operations operating at any
one time). This releases the system from waiting for the
completion of a program or erase operation, greatly improv-
ing system performance.
The device can be organized in both top and bottom sector
configurations. The banks are organized as follows:
Page Mode Features
The page size is 8 words. After initial page access is accom-
plished, the page mode operation provides fast read access
speed of random locations within that page.
Standard Flash Memory Features
The device requires a single 3.0 volt power supply (2.7 V
to 3.6 V or 2.7 V to 3.3 V) for both read and write functions.
Internally generated and regulated voltages are provided for
the program and erase operations.
The device is entirely command set compatible with the
JEDEC 42.4 single-power-supply Flash standard. Com-
mands are written to the command register using standard
microprocessor write timing. Register contents serve as in-
puts to an internal state-machine that controls the erase and
programming circuitry. Write cycles also internally latch ad-
dresses and data needed for the programming and erase
operations. Reading data out of the device is similar to read-
ing from other Flash or EPROM devices.
Device programming occurs by executing the program com-
mand sequence. The Unlock Bypass mode facilitates faster
programming times by requiring only two write cycles to pro-
gram data instead of four. Device erasure occurs by execut-
ing the erase command sequence.
The host system can detect whether a program or erase op-
eration is complete by reading the DQ7 (Data# Polling) and
DQ6 (toggle) status bits. After a program or erase cycle has
been completed, the device is ready to read array data or ac-
cept another command.
The sector erase architecture allows memory sectors to be
erased and reprogrammed without affecting the data con-
tents of other sectors. The device is fully erased when
shipped from the factory.
Hardware data protection measures include a low VCC de-
tector that automatically inhibits write operations during
power transitions. The hardware sector protection feature
disables both program and erase operations in any combina-
tion of sectors of memory. This can be achieved in-system or
via programming equipment.
The Erase Suspend/Erase Resume feature enables the
user to put erase on hold for any period of time to read data
from, or program data to, any sector that is not selected for
erasure. True background erase can thus be achieved. If a
read is needed from the SecSi Sector area (One Time Pro-
gram area) after an erase suspend, then the user must use
the proper command sequence to enter and exit this region.
The device offers two power-saving features. When ad-
dresses have been stable for a specified amount of time, the
device enters the automatic sleep mode. The system can
also place the device into the standby mode. Power con-
sumption is greatly reduced in both these modes.
AMDโ€™s Flash technology combined years of Flash memory
manufacturing experience to produce the highest levels of
quality, reliability and cost effectiveness. The device electri-
cally erases all bits within a sector simultaneously via
Fowler-Nordheim tunneling. The data is programmed using
hot electron injection.
Note: The next-generation S29PL129J will have a different bank configuration, as follows:
Chip Enable Configuration
CE1# Control
CE2# Control
Bank 1A
48 Mbit (32 Kw x 96)
Bank 2A
16 Mbit (4 Kw x 8 and 32 Kw x 31)
Bank 1B
16 Mbit (4 Kw x 8 and 32 Kw x 31)
Bank 2B
48 Mbit (32 Kw x 96)
Chip Enable Configuration
CE1# Control
CE2# Control
Bank 1A
16 Mbit (4 Kw x 8 and 32 Kw x 31)
Bank 2A
48 Mbit (32 Kw x 96)
Bank 1B
48 Mbit (32 Kw x 96)
Bank 2B
16 Mbit (4 Kw x 8 and 32 Kw x 31)


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