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AM29PDL127H ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 4 Page - Advanced Micro Devices

๋ถ€ํ’ˆ๋ช… AM29PDL127H
์ƒ์„ธ๋‚ด์šฉ  128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIOTM Control
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AM29PDL127H ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 4 Page - Advanced Micro Devices

 
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Am29PDL127H
June 07, 2005
P RE L I M I NARY
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
โ–  128 Mbit Page Mode device
โ€” Page size of 8 words: Fast page read access from random
locations within the page
โ–  Single power supply operation
โ€” Full Voltage range: 2.7 to 3.6 volt read, erase, and program
operations for battery-powered applications
โ–  Simultaneous Read/Write Operation
โ€” Data can be continuously read from one bank while
executing erase/program functions in another bank
โ€” Zero latency switching from write to read operations
โ–  FlexBank Architecture
โ€” 4 separate banks, with up to two simultaneous operations
per device
โ€” Bank A: 16 Mbit (4 Kw x 8 and 32 Kw x 31)
โ€” Bank B: 48 Mbit (32 Kw x 96)
โ€” Bank C: 48 Mbit (32 Kw x 96)
โ€” Bank D: 16 Mbit (4 Kw x 8 and 32 Kw x 31)
โ–  Enhanced VersatileI/OTM (V
IO) Control
โ€” Output voltage generated and input voltages tolerated on all
control inputs and I/Os is determined by the voltage on the
VIO pin
โ€”VIO options at 1.8 V and 3 V I/O
โ–  SecSiTM (Secured Silicon) Sector region
โ€” Up to 128 words accessible through a command sequence
โ€” Up to 64 factory-locked words
โ€” Up to 64 customer-lockable words
โ–  Both top and bottom boot blocks in one device
โ–  Manufactured on 0.13 ยตm process technology
โ–  20-year data retention at 125ยฐC
โ–  Minimum 1 million erase cycle guarantee per sector
PERFORMANCE CHARACTERISTICS
โ–  High Performance
โ€” Page access times as fast as 20 ns
โ€” Random access times as fast as 55 ns
โ–  Power consumption (typical values at 10 MHz)
โ€” 45 mA active read current
โ€” 18 mA program/erase current
โ€” 1 ยตA typical standby mode current
SOFTWARE FEATURES
โ–  Software command-set compatible with JEDEC 42.4
standard
โ€” Backward compatible with Am29F and Am29LV families
โ–  CFI (Common Flash Interface) complaint
โ€” Provides device-specific information to the system, allowing
host software to easily reconfigure for different Flash devices
โ–  Erase Suspend / Erase Resume
โ€” Suspends an erase operation to allow read or program
operations in other sectors of same bank
โ–  Unlock Bypass Program command
โ€” Reduces overall programming time when issuing multiple
program command sequences
HARDWARE FEATURES
โ–  Ready/Busy# pin (RY/BY#)
โ€” Provides a hardware method of detecting program or erase
cycle completion
โ–  Hardware reset pin (RESET#)
โ€” Hardware method to reset the device to reading array data
โ–  WP#/ ACC (Write Protect/Acceleration) input
โ€”At VIL, hardware level protection for the first and last two 4K
word sectors.
โ€”At VIH, allows removal of sector protection
โ€”At VHH, provides accelerated programming in a factory
setting
โ–  Persistent Sector Protection
โ€” A command sector protection method to lock combinations
of individual sectors and sector groups to prevent program or
erase operations within that sector
โ€” Sectors can be locked and unlocked in-system at VCC level
โ–  Password Sector Protection
โ€” A sophisticated sector protection method to lock
combinations of individual sectors and sector groups to
prevent program or erase operations within that sector using
a user-defined 64-bit password
โ–  Package options
โ€” 80-ball Fine-pitch BGA
โ€” Multi Chip Packages (MCP)


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