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AM29BDS320GBD4VMI 데이터시트(HTML) 59 Page - SPANSION

부품명 AM29BDS320GBD4VMI
상세내용  32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
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AM29BDS320GBD4VMI 데이터시트(HTML) 59 Page - SPANSION

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October 1, 2003 27243B1
Am29BDS320G
57
Prelimin ary
AC Characteristics
Erase/Program Operations
Notes:
1. Not 100% tested.
2. In asynchronous timing, addresses are latched on the falling edge of WE#. In synchronous mode, addresses are
latched on the first of either the rising edge of AVD# or the active edge of CLK.
3. See the “Erase and Programming Performance” section for more information.
4. Does not include the preprogramming time.
Parameter
Description
All
Speed
Options
Unit
JEDEC
Standard
tAVAV
tWC
Write Cycle Time (Note 1)
Min
80
ns
tAVWL
tAS
Address Setup Time
(Note 2)
Synchronous
Min
5
ns
Asynchronous
0
tWLAX
tAH
Address Hold Time
(Note 2)
Synchronous
Min
7
ns
Asynchronous
45
tACS
Address Setup Time to CLK (Note 2)
Min
5
ns
tACH
Address Hold Time to CLK (Note 2)
Min
7
ns
tDVWH
tDS
Data Setup Time
Min
45
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
tGHWL
tGHWL
Read Recovery Time Before Write
Min
0
ns
tCAS
CE# Setup Time to AVD#
Min
0
ns
tWHEH
tCH
CE# Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
50
ns
tWHWL
tWPH
Write Pulse Width High
Min
30
ns
tSR/W
Latency Between Read and Write Operations
Min
0
ns
tWHWH1
tWHWH1
Programming Operation (Note 3)
Typ
8
µs
tWHWH1
tWHWH1
Accelerated Programming Operation (Note 3)
Typ
2.5
µs
tWHWH2
tWHWH2
Sector Erase Operation (Notes 3, 4)
Typ
0.4
sec
Chip Erase Operation (Notes 3, 4)
28
tVID
VACC Rise and Fall Time
Min
500
ns
tVIDS
VACC Setup Time (During Accelerated Programming)
Min
1
µs
tVCS
VCC Setup Time
Min
50
µs
tCSW1
Clock Setup Time to WE# (Asynchronous)
Min
5
ns
tCSW2
Clock Setup Time to WE# (Synchronous)
Min
1
ns
tCHW
Clock Hold Time from WE#
Max
1
ns
tELWL
tCS
CE# Setup Time to WE#
Min
0
ns
tAVSW
AVD# Setup Time to WE#
Min
5
ns
tAVHW
AVD# Hold Time to WE#
Min
5
ns
tAVHC
AVD# Hold Time to CLK
Min
5
ns
tAVDP
AVD# Low Time
Min
12
ns


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