전자부품 데이터시트 검색엔진
  Korean  ▼

Delete All
ON OFF
ALLDATASHEET.CO.KR

X  

Preview PDF Download HTML

AM29BDS320GTC4VMI 데이터시트(HTML) 4 Page - SPANSION

부품명 AM29BDS320GTC4VMI
상세내용  32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
Download  74 Pages
Scroll/Zoom Zoom In 100% Zoom Out
제조사  SPANSION [SPANSION]
홈페이지  http://www.spansion.com
Logo 

AM29BDS320GTC4VMI 데이터시트(HTML) 4 Page - SPANSION

 
Zoom Inzoom in Zoom Outzoom out
/ 74 page
 4 / 74 page
background image
2Am29BDS320G
27243B1 October 1, 2003
Prelimin ary
General Description
The Am29BDS320G is a 32 Mbit, 1.8 Volt-only, simultaneous Read/Write, Burst
Mode Flash memory device, organized as 2,097,152 words of 16 bits each. This
device uses a single VCC of 1.65 to 1.95 V to read, program, and erase the mem-
ory array. The device supports Enhanced VIO to offer up to 3V compatible inputs
and outputs. A 12.0-volt VID may be used for faster program performance if de-
sired. The device can also be programmed in standard EPROM programmers.
At 54 MHz, the device provides a burst access of 13.5 ns at 30 pF with a latency
of 87.5 ns at 30 pF. At 40 MHz, the device provides a burst access of 20 ns at 30
pF with a latency of 95 ns at 30 pF. The device operates within the industrial tem-
perature range of -40°C to +85°C. The device is offered in the 64-ball FBGA
package.
The Simultaneous Read/Write architecture provides simultaneous operation
by dividing the memory space into four banks. The device can improve overall
system performance by allowing a host system to program or erase in one bank,
then immediately and simultaneously read from another bank, with zero latency.
This releases the system from waiting for the completion of program or erase
operations.
The device is divided as shown in the following table:
The Enhanced VersatileIO™ (VIO) control allows the host system to set the volt-
age levels that the device generates at its data outputs and the voltages tolerated
at its data inputs to the same voltage level that is asserted on the VIO pin. This
allows the device to operate in 1.8 V and 3 V system environments as required.
The device uses Chip Enable (CE#), Write Enable (WE#), Address Valid (AVD#)
and Output Enable (OE#) to control asynchronous read and write operations. For
burst operations, the device additionally requires Ready (RDY), and Clock (CLK).
This implementation allows easy interface with minimal glue logic to a wide range
of microprocessors/microcontrollers for high performance read operations.
The burst read mode feature gives system designers flexibility in the interface to
the device. The user can preset the burst length and wrap through the same
memory space, or read the flash array in continuous mode.
The clock polarity feature provides system designers a choice of active clock
edges, either rising or falling. The active clock edge initiates burst accesses and
determines when data will be output.
The device is entirely command set compatible with the JEDEC 42.4 single-
power-supply Flash standard. Commands are written to the command regis-
ter using standard microprocessor write timing. Register contents serve as inputs
to an internal state-machine that controls the erase and programming circuitry.
Bank
Quantity
Size
A
48 Kwords
15
32 Kwords
B
16
32 Kwords
C
16
32 Kwords
D
15
32 Kwords
48 Kwords


Html Pages

1  2  3  4  5  6  7  8  9  10  11  12  13  14  15  16  17  18  19  20  21  22  23  24  25  26  27  28  29  30  31  32  33  34  35  36  37  38  39  40  41  42  43  44  45  46  47  48  49  50  51  52  53  54  55  56  57  58  59  60  61  62  63  64  65  66  67  68  69  70  71  72  73  74 


데이터시트 Download



관련 부품명

부품명상세내용Html View제조사
AM29BDS128H128 or 64 Megabit 8 M or 4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write Burst Mode Flash Memory 1 2 3 4 5 MoreAdvanced Micro Devices
AM29BDS643G64 Megabit 4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write Burst Mode Flash Memory 1 2 3 4 5 MoreAdvanced Micro Devices
AM29BDS640G64 Megabit 4 M x 16-Bit 1.8 Volt-only Simultaneous Read/Write Burst Mode Flash Memory 1 2 3 4 5 MoreAdvanced Micro Devices
AM42BDS6408HCMOS 1.8 Volt-only Simultaneous Read/Write Burst Mode Flash Memory and 8 Mbit 512 K x 16-Bit SRAM 1 2 3 4 5 MoreSPANSION
AM42BDS640AG64 Megabit 4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Operation Burst Mode Flash Memory and 16 Mbit 1 M x 16-Bit Static RAM 1 2 3 4 5 MoreAdvanced Micro Devices
AM29PDL129H128 Megabit 8 M x 16-Bit CMOS 3.0 Volt-only Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO 1 2 3 4 5 MoreAdvanced Micro Devices
AM29PDL127H128 Megabit 8 M x 16-Bit CMOS 3.0 Volt-only Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIOTM Control 1 2 3 4 5 MoreAdvanced Micro Devices
AM29PDS322D32 Megabit 2 M x 16-Bit CMOS 1.8 Volt-only 1.8 V to 2.2 V Simultaneous Read/Write Page-Mode Boot Sector Flash Memory 1 2 3 4 5 MoreAdvanced Micro Devices
AM29BDD160G_0616 Megabit 1 M x 16-bit/512 K x 32-Bit CMOS 2.5 Volt-only Burst Mode Dual Boot Simultaneous Read/Write Flash Memory 1 2 3 4 5 MoreAdvanced Micro Devices
AM41PDS3224D32 Megabit 2 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Operation Page Mode Flash Memory and 4 Mbit 512 K x 8-Bit/256 K x 16-Bit Static RAM 1 2 3 4 5 MoreAdvanced Micro Devices

링크 URL



Privacy Policy
ALLDATASHEET.CO.KR
ALLDATASHEET 가 귀하에 도움이 되셨나요?  [ DONATE ]  

Alldatasheet는?   |   광고문의    |   운영자에게 연락하기   |   개인정보취급방침   |   즐겨찾기   |   링크교환   |   제조사별 검색
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn