AM42BDS6408HD8I datasheet(52/90 Pages) SPANSION

부품명	AM42BDS6408HD8I

상세설명	CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory, and 8 Mbit (512 K x 16-Bit) SRAM

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52 / 90 page

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Am42BDS6408H

October 23, 2003

A D VA NCE

I N FO RM ATIO N

Notes:

1. Typical values measured at VCC = 2.0 V, TA = 25°C. Not 100% tested.

2. Undershoot is –1.0 V when pulse width

≤ 20 ns.

3. Overshoot is VCC + 1.0 V when pulse width ≤ 20 ns.

4. Overshoot and undershoot are sampled, not 100% tested.

SRAM DC AND OPERATING CHARACTERISTICS

Parameter

Symbol

Parameter Description

Test Conditions

Min

Typ

Max

Unit

ILI

Input Leakage Current

VIN = VSS to VCC

–1.0

1.0

µA

ILO

Output Leakage Current

CE1#s = VIH, CE2s = VIL or OE# =

VIH or WE# = VIL, VIO= VSS to VCC

–1.0

1.0

µA

ICC

Operating Power Supply Current

IIO = 0 mA, CE1#s = VIL, CE2s =

WE# = VIH, VIN = VIH or VIL

5mA

ICC1s

Average Operating Current

Cycle time = 1 µs, 100% duty,

IIO = 0 mA, CE1#s ≤ 0.2 V,

CE2

≥ VCC – 0.2 V, VIN ≤ 0.2 V or

VIN ≥ VCC – 0.2 V

15

mA

ICC2s

Average Operating Current

Cycle time = Min., IIO = 0 mA,

100% duty, CE1#s = VIL, CE2s =

VIH, VIN = VIL = or VIH

815

mA

VOL

Output Low Voltage

IOL = 0.1 mA

0.2

V

VOH

Output High Voltage

IOH = –0.1 mA

1.4

V

ISB1

Standby Current (CMOS)

CE1#s

≥ VCC – 0.2 V, CE2 ≥ VCC

– 0.2 V (CE1#s controlled) or CE2

≤ 0.2 V (CE2s controlled), CIOs =

VSS or VCC, Other input = 0 ~ VCC

225

µA

VIL

Input Low Voltage

–0.2

(Note 2)

0.4

V

VIH

Input High Voltage

1.4

VCC+0.

2

(Note 3)

V

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SPANSION	AM42BDS640AG	1Mb / 72P	Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
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