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AM42BDS6408HD3I 데이터시트(PDF) 17 Page - SPANSION

부품명 AM42BDS6408HD3I
상세설명  CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory, and 8 Mbit (512 K x 16-Bit) SRAM
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October 23, 2003
Am42BDS6408H
15
A D VA NCE
I N FO RM ATIO N
“bank address” is the address bits required to uniquely
select a bank. Similarly, a “sector address” is the
address bits required to uniquely select a sector.
ICC2 in the “DC Characteristics” section on page 49
represents the active current specification for the write
mode. The AC Characteristics section contains timing
specification tables and timing diagrams for write oper-
ations.
Accelerated Program Operation
The device offers accelerated program operations
through the ACC function. ACC is primarily intended to
allow faster manufacturing throughput at the factory.
If the system asserts VHH on this input, the device auto-
matically enters the aforementioned Unlock Bypass
mode and uses the higher voltage on the input to
reduce the time required for program operations. The
system would use a two-cycle program command
sequence as required by the Unlock Bypass mode.
Removing VHH from the ACC input returns the device
to normal operation. Note that sectors must be
unlocked prior to raising ACC to VHH. Note that the
ACC pin must not be at VHH for operations other than
accelerated programming, or device damage may
result. In addition, the ACC pin must not be left floating
or unconnected; inconsistent behavior of the device
may result.
When at VIL, ACC locks all sectors. ACC should be at
VIH for all other conditions.


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