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AM49DL6408H70IS 데이터시트(PDF) 37 Page - SPANSION

부품명 AM49DL6408H70IS
상세설명  64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (512 K x 16-Bit)
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March 12, 2004
Am49DL6408H
35
ADV ANCE
I N FO RMAT I O N
PSEUDO SRAM DC AND
OPERATING CHARACTERISTICS
Notes:
1. T
A= –40
° to 85°C, otherwise specified.
2. Overshoot: V
CC+1.0V if pulse width
20 ns.
3. Undershoot: –1.0V if pulse width
20 ns.
4. Overshoot and undershoot are sampled, not 100% tested.
5. Stable power supply required 200 µs before device operation.
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
I
LI
Input Leakage Current
V
IN = VSS to VCC
–1.0
1.0
µA
I
LO
Output Leakage Current
CE1#s = V
IH, CE2s = VIL or OE# =
V
IH or WE# = VIL, VIO= VSS to VCC
–1.0
1.0
µA
I
CC1s
Average Operating Current
Cycle time = 1 µs, 100% duty,
I
IO = 0 mA, CE1#s ≤ 0.2 V,
CE2
≥ V
CC – 0.2 V, VIN ≤ 0.2 V or
V
IN ≥ VCC – 0.2 V, VCC = 3.3 V
35
mA
I
CC2s
Average Operating Current
Cycle time = Min., I
IO = 0 mA,
100% duty, CE1#s = V
IL, CE2s =
V
IH, VIN = VIL or VIH, VCC = 3.3 V
12
23
mA
V
IL
Input Low Voltage
–0.2
(Note 3)
0.4
V
V
IH
Input High Voltage
2.2
V
CC+0.2
(Note 2)
V
V
OL
Output Low Voltage
I
OL = 2.0 mA
0.4
V
V
OH
Output High Voltage
I
OH = –1.0 mA
2.2
V
I
SB
Standby Current (TTL)
CE1#s = V
IH, CE2 = VIL, Other
inputs = V
IH or VIL
0.3
mA
I
SB1
Standby Current (CMOS)
CE1#s
=V
IH, CE2= VIL:
Other inputs = V
IH or VIL:
t
A = 85°C, VCC = 3.0 V
60
µA
I
SB2
Standby Current (CMOS)
CE1#s
=V
IH, CE2= VIL:
Other inputs = V
IH or VIL:
t
A = 85°C, VCC = 3.3 V
85
µA


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