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FCAS50SN60 데이터시트(PDF) 6 Page - Fairchild Semiconductor |
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FCAS50SN60 데이터시트(HTML) 6 Page - Fairchild Semiconductor |
6 / 16 page 6 www.fairchildsemi.com FCAS50SN60 Rev. A Electrical Characteristics (T J = 25°C, Unless Otherwise Specified) Inverter Part Note: 3. tON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally. For the detailed information, please see Figure 4. Figure 4. Switching Time Definition Symbol Parameter Conditions Min. Typ. Max. Units VCE(SAT) Collector-Emitter Saturation Voltage VCC = VBS = 15V VIN = 5V IC = 50A, TJ = 25°C - 1.6 2.3 V VFM FWDi Forward Voltage VIN = 0V IC = 50A, TJ = 25°C - 2.1 3.0 V HS tON Switching Times VPN = 300V, VCC = VBS = 15V IC = 50A VIN = 0V ↔ 5V, Inductive Load RE(H) = 10Ω (Note 3) -0.8 - µs tC(ON) -0.6 - µs tOFF -1.5 - µs tC(OFF) -0.8 - µs trr -0.08 - µs LS tON VPN = 300V, VCC = VBS = 15V IC = 50A VIN = 0V ↔ 5V, Inductive Load (Note 3) -1.1 - µs tC(ON) -0.9 - µs tOFF -1.5 - µs tC(OFF) -0.8 - µs trr -0.05 - µs ICES Collector - Emitter Leakage Current VCE = VCES - - 250 µA V CE I C V IN t OF F t C ( O FF) V IN ( O F F ) 10 % V CE 10 % I C V CE I C V IN t ON t C( O N ) V IN ( O N ) 10 % I C 10 % V CE 90 % I C 1 00% I C t rr |
유사한 부품 번호 - FCAS50SN60_06 |
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유사한 설명 - FCAS50SN60_06 |
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