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FDC638P 데이터시트(PDF) 2 Page - Fairchild Semiconductor

부품명 FDC638P
상세설명  P-Channel 2.5V PowerTrench Specified MOSFET
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제조업체  FAIRCHILD [Fairchild Semiconductor]
홈페이지  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDC638P 데이터시트(HTML) 2 Page - Fairchild Semiconductor

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FDC638P Rev F (W)
Electrical Characteristics
T
A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V, ID = –250
µA
–20
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = –250
µA,Referenced to 25°C
–14
mV/
°C
IDSS
Zero Gate Voltage Drain Current
VDS = –16 V, VGS = 0 V
–1
µA
IGSSF
Gate–Body Leakage, Forward
VGS = 8 V,
VDS = 0 V
100
nA
IGSSR
Gate–Body Leakage, Reverse
VGS = –8 V,
VDS = 0 V
–100
nA
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = –250
µA
–0.4
–0.8
–1.5
V
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
ID = –250
µA,Referenced to 25°C
3
mV/
°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = –4.5 V,
ID = –4.5 A
VGS = –2.5 V,
ID = –3.8 A
VGS = –4.5 V, ID = –4.5 TJ=125
°C
39
52
54
48
65
72
m
ID(on)
On–State Drain Current
VGS = –4.5 V,
VDS = –5 V
–20
A
gFS
Forward Transconductance
VDS = –10 V,
ID = –4.5 A
15
S
Dynamic Characteristics
Ciss
Input Capacitance
1160
pF
Coss
Output Capacitance
195
pF
Crss
Reverse Transfer Capacitance
VDS = –10 V,
V GS = 0 V,
f = 1.0 MHz
105
pF
Switching Characteristics
(Note 2)
td(on)
Turn–On Delay Time
12
22
ns
tr
Turn–On Rise Time
9
18
ns
td(off)
Turn–Off Delay Time
33
53
ns
tf
Turn–Off Fall Time
VDD = –5 V,
ID = –1 A,
VGS = –4.5 V,
RGEN = 6
12
22
ns
Qg
Total Gate Charge
10
14
nC
Qgs
Gate–Source Charge
2.2
nC
Qgd
Gate–Drain Charge
VDS = –10 V,
ID = –4.5 A,
VGS = –4.5 V
1.5
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
–1.3
A
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = –1.3 A
(Note 2)
–0.73
–1.2
V
Notes:
1. RθJAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJCis guaranteed by design while RθCAis determined by the user's board design.
a)
78°C/W when
mounted on a 1in
2 pad
of 2 oz copper
b)
156°C/W when mounted
on a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300
µs, Duty Cycle < 2.0%


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