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IRF6100PBF 데이터시트(PDF) 2 Page - International Rectifier |
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IRF6100PBF 데이터시트(HTML) 2 Page - International Rectifier |
2 / 8 page IRF6100PbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -20 ––– ––– V VGS = 0V, ID = -250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.010 ––– V/°C Reference to 25°C, ID = -1mA ––– ––– 0.065 VGS = -4.5V, ID = -5.1A ––– 0.095 VGS = -2.5V, ID = -4.1A VGS(th) Gate Threshold Voltage -0.45 ––– -1.2 V VDS = VGS, ID = -250µA gfs Forward Transconductance 9.8 ––– ––– S VDS = -10V, ID = -5.1A ––– ––– -1.0 µA VDS = -20V, VGS = 0V ––– ––– -25 VDS = -16V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 12V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -12V Qg Total Gate Charge ––– 14 21 ID = -5.1A Qgs Gate-to-Source Charge ––– 1.9 2.9 nC VDS = -16V Qgd Gate-to-Drain ("Miller") Charge ––– 5.0 7.5 VGS = -5.0V td(on) Turn-On Delay Time ––– 12 ––– VDD = -10V tr Rise Time ––– 12 ––– ID = -1.0A td(off) Turn-Off Delay Time ––– 50 ––– RG = 5.8Ω tf Fall Time ––– 50 ––– VGS = -4.5V Ciss Input Capacitance ––– 1230 ––– VGS = 0V Coss Output Capacitance ––– 250 ––– pF VDS = -15V Crss Reverse Transfer Capacitance ––– 180 ––– ƒ = 1.0MHz, See Fig. 5 Repetitive rating; pulse width limited by max. junction temperature. Notes: Pulse width ≤ 400µs; duty cycle ≤ 2%. Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.2A, VGS = 0V trr Reverse Recovery Time ––– 48 72 ns TJ = 25°C, IF = -2.2A Qrr Reverse RecoveryCharge ––– 34 51 nC di/dt = 100A/µs Source-Drain Ratings and Characteristics -33 -2.2 A When mounted on 1 inch square 2oz copper on FR-4. Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS Ω RDS(on) Static Drain-to-Source On-Resistance IDSS Drain-to-Source Leakage Current ns S D G |
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