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IRF7416PBF 데이터시트(PDF) 2 Page - International Rectifier |
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IRF7416PBF 데이터시트(HTML) 2 Page - International Rectifier |
2 / 9 page IRF7416PbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage -1.0 V TJ = 25°C, IS = -5.6A, VGS = 0V trr Reverse Recovery Time 56 85 ns TJ = 25°C, IF = -5.6A Qrr Reverse RecoveryCharge 99 150 nC di/dt = 100A/µs Source-Drain Ratings and Characteristics A -45 -3.1 Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -30 V VGS = 0V, ID = -250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient -0.024 V/°C Reference to 25°C, ID = -1mA 0.020 VGS = -10V, ID = -5.6A 0.035 VGS = -4.5V, ID = -2.8A VGS(th) Gate Threshold Voltage -1.0 V VDS = VGS, ID = -250µA gfs Forward Transconductance 5.6 S VDS = -10V, ID = -2.8A -1.0 VDS = -24V, VGS = 0V -25 VDS = -24V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage -100 VGS = -20V Gate-to-Source Reverse Leakage 100 VGS = 20V Qg Total Gate Charge 61 92 ID = -5.6A Qgs Gate-to-Source Charge 8.0 12 nC VDS = -24V Qgd Gate-to-Drain ("Miller") Charge 22 32 VGS = -10V, See Fig. 6 and 9 td(on) Turn-On Delay Time 18 VDD = -15V tr Rise Time 49 ID = -5.6A td(off) Turn-Off Delay Time 59 RG = 6.2Ω tf Fall Time 60 RD = 2.7Ω, See Fig. 10 Ciss Input Capacitance 1700 VGS = 0V Coss Output Capacitance 890 pF VDS = -25V Crss Reverse Transfer Capacitance 410 = 1.0MHz, See Fig. 5 Ω µA nA ns IGSS IDSS Drain-to-Source Leakage Current RDS(on) Static Drain-to-Source On-Resistance Electrical Characteristics @ TJ = 25°C (unless otherwise specified) S D G Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) I SD ≤ -5.6A, di/dt ≤ 100A/µs, V DD ≤ V(BR)DSS, TJ ≤ 150°C Starting TJ = 25°C, L = 25mH RG = 25Ω, IAS = -5.6A. (See Figure 12) Pulse width ≤ 300µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 10sec. |
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