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IRFP22N60KPBF 데이터시트(PDF) 2 Page - International Rectifier |
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IRFP22N60KPBF 데이터시트(HTML) 2 Page - International Rectifier |
2 / 8 page IRFP22N60KPbF 2 www.irf.com Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 600 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.30 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– 240 280 m Ω VGS = 10V, ID = 13A VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V VDS = VGS, ID = 250µA ––– ––– 50 µA VDS = 600V, VGS = 0V ––– ––– 250 µA VDS = 480V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -30V Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 11 ––– ––– S VDS = 50V, ID = 13A Qg Total Gate Charge ––– ––– 150 ID = 22A Qgs Gate-to-Source Charge ––– ––– 45 nC VDS = 480V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 76 VGS = 10V td(on) Turn-On Delay Time ––– 26 ––– VDD = 300V tr Rise Time ––– 99 ––– ID = 22A td(off) Turn-Off Delay Time ––– 48 ––– RG = 6.2 Ω tf Fall Time ––– 37 ––– VGS = 10V Ciss Input Capacitance ––– 3570 ––– VGS = 0V Coss Output Capacitance ––– 350 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 36 ––– pF ƒ = 1.0MHz Coss Output Capacitance ––– 4710 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 92 ––– VGS = 0V, VDS = 480V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 180 ––– VGS = 0V, VDS = 0V to 480V Dynamic @ TJ = 25°C (unless otherwise specified) ns Static @ TJ = 25°C (unless otherwise specified) IGSS IDSS Drain-to-Source Leakage Current Repetitive rating; pulse width limited by max. junction temperature. ISD ≤ 22A, di/dt ≤ 360 A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C. Notes: Starting TJ = 25°C, L = 1.5mH, RG = 25Ω, IAS = 22A Pulse width ≤ 300µs; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . S D G Diode Characteristics A Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 22 MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current ––– ––– 88 integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C, IS = 22A, VGS = 0V ––– 590 890 TJ = 25°C IF = 22A ––– 670 1010 TJ = 125°C di/dt = 100A/µs ––– 7.2 11 TJ = 25°C ––– 8.5 13 TJ = 125°C IRRM Reverse Recovery Current ––– 26 39 A TJ = 25°C ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) trr Reverse Recovery Time Qrr Reverse Recovery Charge ns µC nA |
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