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IRFP2907ZPBF 데이터시트(PDF) 2 Page - International Rectifier

부품명 IRFP2907ZPBF
상세설명  HEXFET Power MOSFET
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

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Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
‚ Limited by TJmax, starting TJ = 25°C,
L=0.13mH, RG = 25Ω, IAS = 90A, VGS =10V.
Part not recommended for use above this value.
ƒ ISD ≤ 90A, di/dt ≤ 340A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C.
„ Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
… Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from 0 to 80% VDSS.
† Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
‡ This value determined from sample failure population. 100%
tested to this value in production.
ˆ Rθ is measured at TJ of approximately 90°C.
S
D
G
S
D
G
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage75
–––
–––
V
∆ΒVDSS/∆TJ
Breakdown Voltage Temp. Coefficient
–––
0.069
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
3.5
4.5
m
VGS(th)
Gate Threshold Voltage2.0
–––
4.0
V
gfs
Forward Transconductance
180
–––
–––
S
IDSS
Drain-to-Source Leakage Current
–––
–––
20
µA
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
200
nA
Gate-to-Source Reverse Leakage
–––
–––
-200
Qg
Total Gate Charge
–––
180
270
Qgs
Gate-to-Source Charge
–––
46
–––
nC
Qgd
Gate-to-Drain ("Miller") Charge
–––
65
–––
td(on)
Turn-On Delay Time
–––19–––
ns
tr
Rise Time
–––
140
–––
td(off)
Turn-Off Delay Time
–––97–––
tf
Fall Time
–––
100
–––
LD
Internal Drain Inductance
–––
5.0
–––
nH
Between lead,
6mm (0.25in.)
LS
Internal Source Inductance
–––
13
–––
from package
and center of die contact
Ciss
Input Capacitance
–––
7500
–––
pF
Coss
Output Capacitance
–––
970
–––
Crss
Reverse Transfer Capacitance
–––
510
–––
Coss
Output Capacitance
–––
3640
–––
Coss
Output Capacitance
–––
650
–––
Coss eff.
Effective Output Capacitance
–––
1020
–––
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
90
(Body Diode)
A
ISM
Pulsed Source Current
–––
–––
680
(Body Diode)
Ù
VSD
Diode Forward Voltage
–––
–––
1.3
V
trr
Reverse Recovery Time
–––
4161ns
Qrr
Reverse Recovery Charge
–––
59
89
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
RG = 2.5Ω
ID = 90A
VDS = 25V, ID = 90A
VDD = 38V
ID = 90A
VGS = 20V
VGS = -20V
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 10V
f
MOSFET symbol
VGS = 0V
VDS = 25V
VGS = 0V, VDS = 60V, ƒ = 1.0MHz
Conditions
VGS = 0V, VDS = 0V to 60V
ƒ = 1.0MHz, See Fig. 5
TJ = 25°C, IF = 90A, VDD = 38V
di/dt = 100A/µs
f
TJ = 25°C, IS = 90A, VGS = 0V f
showing the
integral reverse
p-n junction diode.
VDS = 60V
VGS = 10V
f
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 90A f
VDS = VGS, ID = 250µA
VDS = 75V, VGS = 0V
VDS = 75V, VGS = 0V, TJ = 125°C


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