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IRFPC60LC-P 데이터시트(PDF) 2 Page - International Rectifier |
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2 / 8 page 2 www.irf.com IRFPC60LC-P Notes: Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.8 V TJ = 25°C, IS = 16A, VGS = 0V trr Reverse Recovery Time ––– 650 980 ns TJ = 25°C, IF = 16A Qrr Reverse RecoveryCharge ––– 6.0 9.0 µC di/dt = 100A/µs ton Forward Turn-On Time Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) VDD = 25V, starting TJ = 25°C, L = 7.2mH RG = 25Ω, IAS = 16A. (See Figure 12) I SD ≤ 16A, di/dt ≤ 140A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Pulse width ≤ 300µs; duty cycle ≤ 2%. Source-Drain Ratings and Characteristics Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 600 ––– ––– VVGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.63 ––– V/°C Reference to 25°C, ID = 1mA RDS(ON) Static Drain-to-Source On-Resistance ––– ––– 0.40 Ω VGS = 10V, ID = 9.6A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 11 ––– ––– SVDS = 50V, ID = 9.6A ––– ––– 25 VDS = 600V, VGS = 0V ––– ––– 250 VDS = 480V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V Qg Total Gate Charge ––– ––– 120 ID = 16A Qgs Gate-to-Source Charge ––– ––– 29 nC VDS = 360V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 48 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 17 ––– VDD = 300V tr Rise Time ––– 57 ––– ID = 16A td(off) Turn-Off Delay Time ––– 43 ––– RG = 4.3Ω tf Fall Time ––– 38 ––– RD = 18Ω, See Fig. 10 Between lead, 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 3500 ––– VGS = 0V Coss Output Capacitance ––– 400 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 39 ––– ƒ = 1.0MHz, See Fig. 5 Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) ––– ––– 64 ––– ––– 16 A nH LD Internal Drain Inductance ––– 5.0 ––– LS Internal Source Inductance ––– 13 ––– IDSS Drain-to-Source Leakage Current IGSS ns µA nA S D G S D G |
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