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FDS4072N3 데이터시트(PDF) 2 Page - Fairchild Semiconductor |
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FDS4072N3 데이터시트(HTML) 2 Page - Fairchild Semiconductor |
2 / 7 page FDS4072N3 Rev B2 (W) Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2) EAS Drain-Source Avalanche Energy Single Pulse, VDD = 20V, ID=12.4 A 200 mJ IAS Drain-Source Avalanche Current 12.4 A Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 40 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C 38 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = 32 V, VGS = 0 V 1 µA IGSSF Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –12 V , VDS = 0 V –100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 1.3 3 V ∆VGS(th) ∆TJ Gate Threshold Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C –4.5 mV/ °C RDS(on) Static Drain–Source On–Resistance VGS = 4.5 V, ID = 12.4 A VGS = 10 V, ID = 13.7 A VGS = 4.5 V, ID = 12.4 A,TJ = 125°C 9.7 8.5 14.7 12 10 20 m Ω gFS Forward Transconductance VDS = 10 V, ID = 12.4 A 84 S Dynamic Characteristics Ciss Input Capacitance 4299 pF Coss Output Capacitance 351 pF Crss Reverse Transfer Capacitance VDS = 20 V, V GS = 0 V, f = 1.0 MHz 149 pF Switching Characteristics (Note 2) td(on) Turn–On Delay Time 20 36 ns tr Turn–On Rise Time 12 22 ns td(off) Turn–Off Delay Time 52 83 ns tf Turn–Off Fall Time VDD = 20 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω 18 32 ns Qg Total Gate Charge 33 46 nC Qgs Gate–Source Charge 7.8 nC Qgd Gate–Drain Charge VDS = 20 V, ID = 12.4 A, VGS = 4.5 V 8.1 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current 2.5 A VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 2.5 A (Note 2) 0.7 1.2 V trr Diode Reverse Recovery Time 30 nS Qrr Diode Reverse Recovery Charge IF = 12.4 A, diF/dt = 100 A/µs 90 nC |
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