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FDS6912_0007 데이터시트(PDF) 4 Page - Fairchild Semiconductor |
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FDS6912_0007 데이터시트(HTML) 4 Page - Fairchild Semiconductor |
4 / 5 page FDS6912 Rev E (W) Typical Characteristics (continued) 0 2 4 6 8 10 04 8 12 16 Qg, GATE CHARGE (nC) ID = 6.3A VDS = 5V 10V 15V 0.3 1 3 10 30 V , DRAIN TO SOURCE VOLTAGE (V) 80 200 2000 DS Ciss f = 1 MHz V = 0V GS Coss C rss 0.1 500 1000 Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 0.1 0.2 0.5 1 2 5 10 20 0.01 0.05 0.5 2 10 20 100 V , DRAIN-SOURCE VOLTAGE (V) DS 1s 100 ms 10s 10m s RD S(O N) LI MIT 1m s 100u s DC V = 10V SINGLE PULSE R = 135 °C/W T = 25°C GS A θJA SINGLE PULSE TIME (SEC) SINGLE PULSE R = 135°C/W T = 25° θJA A 30 25 20 15 10 5 0 0.01 0.1 1 10 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 0.0001 0.001 0.01 0.1 1 10 100 300 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 t , TIME (sec) 1 Single Pulse D = 0.5 0.1 0.05 0.02 0.01 0.2 Duty Cycle, D = t /t 1 2 R (t) = r(t) * R R = 135°C/W θJA θJA θJA T - T = P * R (t) θJA A J P(pk) t1 t 2 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. |
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