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FQA7N80 데이터시트(PDF) 2 Page - Fairchild Semiconductor |
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FQA7N80 데이터시트(HTML) 2 Page - Fairchild Semiconductor |
2 / 9 page 2 www.fairchildsemi.com FQA7N80 Rev. A1 Package Marking and Ordering Information Electrical Characteristics T C = 25°C unless otherwise noted NOTES: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 21mH, IAS =7.2A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 6.6A, di/dt ≤200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Device Marking Device Package Reel Size Tape Width Quantity FQA7N80 FQA7N80 TO-3P -- -- 30 FQA7N80 FQA7N80_F109 TO-3PN -- -- 30 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 800 -- -- V ∆BVDSS/ ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.77 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 800 V, VGS = 0 V -- -- 10 µA VDS = 640 V, TC = 125°C -- -- 100 µA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA3.0 -- 5.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 3.6A -- 1.2 1.5 Ω gFS Forward Transconductance VDS = 50 V, ID = 3.6A (Note 4) -- 6 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 1420 1850 pF Coss Output Capacitance -- 150 195 pF Crss Reverse Transfer Capacitance -- 19 25 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 400 V, ID = 6.6A, RG = 25 Ω (Note 4, 5) -- 35 80 ns tr Turn-On Rise Time -- 80 170 ns td(off) Turn-Off Delay Time -- 95 200 ns tf Turn-Off Fall Time -- 55 120 ns Qg Total Gate Charge VDS = 640 V, ID = 6.6A, VGS = 10 V (Note 4, 5) -- 40 52 nC Qgs Gate-Source Charge -- 8.5 -- nC Qgd Gate-Drain Charge -- 20 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 7.2 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 28.8 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS =7.2 A -- -- 1.4 V trr Reverse Recovery Time VGS = 0 V, IS = 6.6 A, dIF / dt = 100 A/µs (Note 4) -- 400 -- ns Qrr Reverse Recovery Charge -- 4.3 -- µC |
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