©2006 Fairchild Semiconductor Corporation

1

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FQH90N15 / FQA90N15 Rev. C

October 2006

FQH90N15 / FQA90N15

N-Channel Power MOSFET

Features

• Low gate charge (typical 220 nC)

•Fast switching

• 100% avalanche tested

• Improved dv/dt capability

•175

°C maximum junction temperature rating

Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche

and commutation mode. These devices are well suited for low

voltage applications such as audio amplifire, high efficiency

switching for DC/DC converters, and DC motor control,

uninterrupted power supply.

S

D

G

G

S

D

TO-247

FQH Series

GS

D

TO-3P

FQA Series

Absolute Maximum Ratings

Symbol

Parameter

FQH90N15/FQA90N15

Unit

Drain-Source Voltage

150

V

Drain Current

90

63.5

A

A

Drain Current

- Pulsed

(Note 1)

360

A

Gate-Source voltage

±25

V

Single Pulsed Avalanche Energy

(Note 2)

1400

mJ

Avalanche Current

(Note 1)

90

A

Repetitive Avalanche Energy

(Note 1)

37.5

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

6.0

V/ns

Power Dissipation

- Derate above 25

°C

375

2.5

W

W/

°C

Operating and Storage Temperature Range

-55 to +175

°C

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

°C

Thermal Characteristics

Symbol

Parameter

Min.

Max.

Unit

Thermal Resistance, Junction-to-Case

--

0.4

°C/W

Thermal Resistance, Case-to-Sink

0.24

--

°C/W

Thermal Resistance, Junction-to-Ambient

--

40

°C/W