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PBYR225CT 데이터시트(PDF) 2 Page - NXP Semiconductors |
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PBYR225CT 데이터시트(HTML) 2 Page - NXP Semiconductors |
2 / 5 page Philips Semiconductors Product specification Rectifier diodes PBYR225CT series Schottky barrier ELECTRICAL CHARACTERISTICS characteristics are per diode at T j = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V F Forward voltage I F = 1 A; Tj = 125˚C - 0.28 0.33 V I F = 2 A - 0.42 0.51 V I R Reverse current V R = VRWM - 0.05 3 mA V R = VRWM; Tj = 100˚C - 5 10 mA C d Junction capacitance V R = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C - 160 - pF PRINTED CIRCUIT BOARD Dimensions in mm. Fig.1. PCB for thermal resistance and power rating for SOT223. PCB: FR4 epoxy glass (1.6 mm thick), copper laminate (35 µm thick). 36 60 9 10 4.6 18 4.5 7 15 50 March 1998 2 Rev 1.100 |
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