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BAT74S 데이터시트(PDF) 2 Page - NXP Semiconductors

부품명 BAT74S
상세설명  Schottky barrier double diode
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제조업체  PHILIPS [NXP Semiconductors]
홈페이지  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BAT74S 데이터시트(HTML) 2 Page - NXP Semiconductors

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2003 Apr 11
2
Philips Semiconductors
Product specification
Schottky barrier double diode
BAT74S
FEATURES
• Low forward voltage
• Guard ring protected
• Small SMD package.
APPLICATIONS
• Ultra high-speed switching
• Voltage clamping
• Protection circuits
• Blocking diodes.
DESCRIPTION
Planar Schottky barrier double diode with an integrated
guard ring for stress protection.
Two separate dies are encapsulated in a SOT363 (SC-88)
small SMD plastic package.
PINNING
PIN
DESCRIPTION
1
anode 1
2
not connected
3
cathode 2
4
anode 2
5
not connected
6
cathode 1
handbook, halfpage
65
4
12
3
MDB277
MSA370
12
3
65
4
Top view
Fig.1
Simplified outline (SOT363; SC-88) and
symbol.
Marking code: 74.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. If both diodes are in forward operation at the same moment, total device current is max. 110 mA. If one diode is in
reverse and the other in forward operation at the same moment, total device current is max. 200 mA.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VR
continuous reverse voltage
30
V
IF
continuous forward current
200
mA
IFRM
repetitive peak forward current
tp ≤ 1s; δ≤ 0.5
300
mA
IFSM
non-repetitive peak forward current
tp < 10 ms
600
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; see Fig.2
240
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
125
°C
Tamb
operating ambient temperature
−65
+125
°C
Double diode operation
VR
continuous reverse voltage
30
V
VR
continuous reverse voltage
series connection
60
V
IF
continuous forward current
110(1)
mA
IFRM
repetitive peak forward current
tp ≤ 1s; δ≤ 0.5
200
mA


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