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IRF7101PBF 데이터시트(HTML) 1 Page - International Rectifier

부품명 IRF7101PBF
상세내용  HEXFET® Power MOSFET
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제조사  IRF [International Rectifier]
홈페이지  http://www.irf.com
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IRF7101PBF 데이터시트(HTML) 1 Page - International Rectifier

   
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Parameter
Min.
Typ.
Max
Units
RθJA
Maximum Junction-to-Ambient
„
–––
–––
62.5
°C/W
HEXFET® Power MOSFET
PD - 95162
l
Adavanced Process Technology
l
Ultra Low On-Resistance
l
Dual N-Channel MOSFET
l
Surface Mount
l
Available in Tape & Reel
l
Dynamic dv/dt Rating
l
Fast Switching
Description
Fourth Generation HEXFETs from International
Rectifier utilize advanced processing techniques to
achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the
designer with an extremely efficient device for use in
a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
dual-die capability making it ideal in a variety of power
applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
IRF7101PbF
SO-8
D1
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
4
5
6
7
Parameter
Max.
Units
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
3.5
ID @ TA = 100°C
Continuous Drain Current, VGS @ 10V
2.3
IDM
Pulsed Drain Current 
14
PD @TC = 25°C
Power Dissipation
2.0
Linear Derating Factor
0.016
W/°C
VGS
Gate-to-Source Voltage
± 12
V
dv/dt
Peak Diode Recovery dv/dt‚
3.0
V/nS
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
Sodering Temperature, for 10 seconds
300(1.6mm from case)
Absolute Maximum Ratings
A
VDSS = 20V
RDS(on) = 0.10Ω
ID = 3.5A
10/6/04
Thermal Resistance Ratings
W
°C
l
Lead-Free


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