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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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IRF7484PBF 데이터시트(PDF) 2 Page - International Rectifier |
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IRF7484PBF 데이터시트(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRF7484PbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 2.3A, VGS = 0V trr Reverse Recovery Time ––– 59 89 ns TJ = 25°C, IF = 2.3A Qrr Reverse Recovery Charge ––– 110 170 nC di/dt = 100A/µs Source-Drain Ratings and Characteristics A 110 Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 400µs; duty cycle ≤ 2%. Surface mounted on 1 in square Cu board. Starting T J = 25°C, L = 2.3mH, RG = 25Ω, IAS = 14A. (See Figure 12). Notes:
I SD ≤ 14A, di/dt ≤ 140A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C. Limited by TJmax , see Fig.16c, 16d, 19, 20 for typical repetitive avalanche performance. Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.040 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 10 m Ω VGS = 7.0V, ID = 14A VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 40 ––– ––– S VDS = 10V, ID = 14A ––– ––– 20 VDS = 40V, VGS = 0V ––– ––– 250 VDS = 32V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 200 VGS = 8.0V Gate-to-Source Reverse Leakage ––– ––– -200 VGS = -8.0V Qg Total Gate Charge ––– 69 100 ID = 14A Qgs Gate-to-Source Charge ––– 9.0 ––– nC VDS = 32V Qgd Gate-to-Drain ("Miller") Charge ––– 16 ––– VGS = 7.0V td(on) Turn-On Delay Time ––– 9.3 ––– VDD = 20V tr Rise Time ––– 5.0 ––– ID = 1.0A td(off) Turn-Off Delay Time ––– 180 ––– RG = 6.2Ω tf Fall Time ––– 58 ––– VGS = 7.0V Ciss Input Capacitance ––– 3520 ––– VGS = 0V Coss Output Capacitance ––– 660 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 76 ––– ƒ = 1.0MHz Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS µA IDSS Drain-to-Source Leakage Current nA ns S D G 2.3 |
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