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IRFZ44ESPBF 데이터시트(HTML) 2 Page - International Rectifier

부품명 IRFZ44ESPBF
상세내용  HEXFET® Power MOSFET
Download  10 Pages
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제조사  IRF [International Rectifier]
홈페이지  http://www.irf.com
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IRFZ44ESPBF 데이터시트(HTML) 2 Page - International Rectifier

 
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IRFZ44ES/LPbF
2
www.irf.com
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.3
V
TJ = 25°C, IS = 29A, VGS = 0V
„
trr
Reverse Recovery Time
–––
69
104
ns
TJ = 25°C, IF = 29A
Qrr
Reverse Recovery Charge
–––
177
266
nC
di/dt = 100A/µs
„
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
48
192
A
‚ Starting T
J = 25°C, L = 520µH
RG = 25Ω, IAS = 29A. (See Figure 12)
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
ƒ ISD ≤ 29A, di/dt ≤ 320A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… Uses IRFZ44E data and test conditions
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended soldering techniques refer to application note #AN-994.
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
60
–––
–––
V
VGS = 0V, ID = 250µA
DV(BR)DSS/DTJ Breakdown Voltage Temp. Coefficient
–––
0.063 –––
V/°C
Reference to 25°C, ID = 1mA
…
RDS(on)
Static Drain-to-Source On-Resistance
–––
––– 0.023
VGS = 10V, ID = 29A
„
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
15
–––
–––
S
VDS = 30V, ID = 29A
…
–––
–––
25
µA
VDS = 60V, VGS = 0V
–––
–––
250
VDS = 48V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 20V
Gate-to-Source Reverse Leakage
–––
–––
-100
nA
VGS = -20V
Qg
Total Gate Charge
–––
–––
60
ID = 29A
Qgs
Gate-to-Source Charge
–––
–––
13
nC
VDS = 48V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
23
VGS = 10V, See Fig. 6 and 13
„…
td(on)
Turn-On Delay Time
–––
12
–––
VDD = 30V
tr
Rise Time
–––
60
–––
ID = 29A
td(off)
Turn-Off Delay Time
–––
70
–––
RG = 15Ω
tf
Fall Time
–––
70
–––
RD = 1.1Ω, See Fig. 10
„…
Between lead,
–––
–––
and center of die contact
Ciss
Input Capacitance
–––
1360 –––
VGS = 0V
Coss
Output Capacitance
–––
420
–––
pF
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
160
–––
ƒ = 1.0MHz, See Fig. 5
…
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
ns
IDSS
Drain-to-Source Leakage Current
nH
7.5
LS
Internal Source Inductance


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