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IRFP4229PBF 데이터시트(PDF) 1 Page - International Rectifier

부품명 IRFP4229PBF
상세설명  PDP SWITCH
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRFP4229PBF 데이터시트(HTML) 1 Page - International Rectifier

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www.irf.com
1
01/29/07
IRFP4229PbF
Notes
 through … are on page 8
Description
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Features
l
Advanced Process Technology
l
Key Parameters Optimized for PDP Sustain,
Energy Recovery and Pass Switch Applications
l
Low EPULSE Rating to Reduce Power
Dissipation in PDP Sustain, Energy Recovery
and Pass Switch Applications
l
Low QG for Fast Response
l
High Repetitive Peak Current Capability for
Reliable Operation
l
Short Fall & Rise Times for Fast Switching
l
175°C Operating Junction Temperature for
Improved Ruggedness
l
Repetitive Avalanche Capability for Robustness
and Reliability
PDP SWITCH
GD
S
Gate
Drain
Source
S
D
G
TO-247AC
S
D
G
D
VDS min
250
V
VDS (Avalanche) typ.
300
V
RDS(ON) typ. @ 10V
38
m
:
IRP max @ TC= 100°C
87
A
TJ max
175
°C
Key Parameters
Absolute Maximum Ratings
Parameter
Units
VGS
Gate-to-Source Voltage
V
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
A
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
IDM
Pulsed Drain Current
c
IRP @ TC = 100°C
Repetitive Peak Current
g
PD @TC = 25°C
Power Dissipation
W
PD @TC = 100°C
Power Dissipation
Linear Derating Factor
W/°C
TJ
Operating Junction and
°C
TSTG
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
N
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
f
–––
0.49
RθCS
Case-to-Sink, Flat, Greased Surface
0.24
–––
°C/W
RθJA
Junction-to-Ambient
f
–––
40
87
300
-40 to + 175
10lb
xin (1.1Nxm)
310
150
2.0
Max.
31
180
44
±30
PD - 97079A


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