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IRHNB4Z60 데이터시트(PDF) 3 Page - International Rectifier |
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IRHNB4Z60 데이터시트(HTML) 3 Page - International Rectifier |
3 / 8 page www.irf.com 3 Pre-Irradiation IRHNB7Z60 Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅ Parameter 100K Rads(Si)1 300 - 1000K Rads (Si)2 Units Test Conditions Min Max Min Max BVDSS Drain-to-Source Breakdown Voltage 30 — 30 — V VGS = 12V, ID = 1.0mA VGS(th) Gate Threshold Voltage 2.0 4.0 1.25 4.5 VGS = VDS, ID = 1.0mA IGSS Gate-to-Source Leakage Forward — 100 — 100 nA VGS = 20V IGSS Gate-to-Source Leakage Reverse — -100 — -100 VGS = -20 V IDSS Zero Gate Voltage Drain Current — 25 — 50 µA VDS=24V, VGS =0V RDS(on) Static Drain-to-Source ➃ — 0.009 — 0.03 Ω VGS = 12V, ID =15A On-State Resistance (TO-3) RDS(on) Static Drain-to-Source ➃ — 0.009 — 0.03 Ω VGS = 12V, ID =15A On-State Resistance (SMD-3) VSD Diode Forward Voltage ➃ — 1.8 — 1.8 V VGS = 0V, IS = 75A International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. 1. Part number IRHNB7Z60 2. Part numbers IRHNB3Z60, IRHNB4Z60 and IRHNB8Z60 Fig a. Single Event Effect, Safe Operating Area International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. For footnotes refer to the last page Table 2. Single Event Effect Safe Operating Area n o I T E L ) ) ² m c / g m ( / V e M y g r e n E ) V e M ( e g n a R ) m µ ( ) V ( S D V V 0 = S G V @V 5 - = S G V @V 0 1 - = S G V @V 5 1 - = S G V @V 0 2 - = S G V @ r B8 . 6 35 0 39 30 30 30 35 20 2 I9 . 9 55 4 38 . 2 35 25 20 25 10 1 U A3 . 0 83 1 35 . 6 25 . 2 25 . 2 25 10 1_ Radiation Characteristics 0 5 10 15 20 25 30 35 0 -5 -10 -15 -20 VGS Br I AU |
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