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IRHNB8Z60 데이터시트(PDF) 4 Page - International Rectifier

부품명 IRHNB8Z60
상세설명  RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3)
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRHNB8Z60 데이터시트(HTML) 4 Page - International Rectifier

  IRHNB8Z60 Datasheet HTML 1Page - International Rectifier IRHNB8Z60 Datasheet HTML 2Page - International Rectifier IRHNB8Z60 Datasheet HTML 3Page - International Rectifier IRHNB8Z60 Datasheet HTML 4Page - International Rectifier IRHNB8Z60 Datasheet HTML 5Page - International Rectifier IRHNB8Z60 Datasheet HTML 6Page - International Rectifier IRHNB8Z60 Datasheet HTML 7Page - International Rectifier IRHNB8Z60 Datasheet HTML 8Page - International Rectifier  
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IRHNB7Z60
Pre-Irradiation
10
100
1000
0.1
1
10
100

20µs PULSE WIDTH
T = 25 C
J
°

TOP
BOTTOM
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
V
, Drain-to-Source Voltage (V)
DS
5.0V
Fig 1. Typical Output Characteristics
10
100
1000
0.1
1
10
100

20µs PULSE WIDTH
T = 150 C
J
°

TOP
BOTTOM
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
V
, Drain-to-Source Voltage (V)
DS
5.0V
Fig 2. Typical Output Characteristics
10
100
1000
5
6
7
8
9
10
11
12

V
= 50V
20µs PULSE WIDTH
DS
V
, Gate-to-Source Voltage (V)
GS

T = 150 C
J
°

T = 25 C
J
°
Fig 3. Typical Transfer Characteristics
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature( C)
J
°


V
=
I =
GS
D
10V
75A
Fig 4. Normalized On-Resistance
Vs. Temperature


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