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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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IRHY593230CM 데이터시트(PDF) 1 Page - International Rectifier |
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IRHY593230CM 데이터시트(HTML) 1 Page - International Rectifier |
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1 / 8 page  Absolute Maximum Ratings Parameter Units ID @ VGS = -12V, TC = 25°C Continuous Drain Current -8.0 ID @ VGS = -12V, TC = 100°C Continuous Drain Current -5.0 IDM Pulsed Drain Current ➀ -32 PD @ TC = 25°C Max. Power Dissipation 75 W Linear Derating Factor 0.6 W/°C VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy ➁ 80 mJ IAR Avalanche Current ➀ -8.0 A EAR Repetitive Avalanche Energy ➀ 7.5 mJ dv/dt Peak Diode Recovery dv/dt ➂ -12 V/ns T J Operating Junction -55 to 150 TSTG Storage Temperature Range Lead Temperature 300 (0.063in/1.6mm from case for 10s ) Weight 4.3 ( Typical ) g Pre-Irradiation International Rectifier’s R5TM technology provides high performance power MOSFETs for space appli- cations. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paral- leling and temperature stability of electrical param- eters. oC A RADIATION HARDENED IRHY597230CM POWER MOSFET THRU-HOLE (TO-257AA) 01/30/03 www.irf.com 1 200V, P-CHANNEL c TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHY597230CM 100K Rads (Si) 0.515 Ω -8.0A IRHY593230CM 300K Rads (Si) 0.515 Ω -8.0A Features: n Single Event Effect (SEE) Hardened n Ultra Low RDS(on) n Low Total Gate Charge n Proton Tolerant n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Package n Light Weight For footnotes refer to the last page 4 4# T0-257AA PD - 94319B |
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유사한 설명 - IRHY593230CM |
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