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IRHYB67130CM 데이터시트(PDF) 3 Page - International Rectifier

부품명 IRHYB67130CM
상세설명  RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRHYB67130CM 데이터시트(HTML) 3 Page - International Rectifier

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Pre-Irradiation
IRHYB67130CM
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation Characteristics
Fig a. Single Event Effect, Safe Operating Area
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Table 2. Single Event Effect Safe Operating Area
Ion
LET
Energy
Range
VDS (V)
(MeV/(mg/cm2))
(MeV)
(µm)
@VGS=
@VGS=
@VGS=
@VGS=
@VGS= @VGS= @VGS=
0V
-5V
-10V
-15V
-17V
-19V
-20V
Br
36.7
309
39.5
100
100
100
100
100
100
40
I
59.8
341
32.5
100
100
100
30
-
-
-
Au
82.3
350
28.4
100
100
-
-
-
-
-
0
20
40
60
80
100
120
-20
-15
-10
-5
0
VGS
Br
I
Au
Part numbers IRHYB67130CM and IRHYB63130CM
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
Up to 300K Rads (Si)
Units
Test Conditions ˆ
Min
Max
BVDSS
Drain-to-Source Breakdown Voltage
100
V
VGS = 0V, ID = 1.0mA
VGS(th)
Gate Threshold Voltage
2.0
4.0
VGS = VDS, ID = 1.0mA
IGSS
Gate-to-Source Leakage Forward
100
nA
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
-100
VGS = -20V
IDSS
Zero Gate Voltage Drain Current
10
µA
VDS= 80V, VGS=0V
RDS(on)
Static Drain-to-Source
„
On-State Resistance (TO-3)
0.044
VGS = 12V, ID = 19A
RDS(on)
Static Drain-to-Source On-State
„
VSD
Diode Forward Voltage
„
1.2
V
VGS = 0V, ID = 20A
Resistance (Low Ohmic TO-257)
0.042
VGS = 12V, ID = 19A


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