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IRHYB67130CM 데이터시트(PDF) 3 Page - International Rectifier |
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IRHYB67130CM 데이터시트(HTML) 3 Page - International Rectifier |
3 / 8 page www.irf.com 3 Pre-Irradiation IRHYB67130CM International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Radiation Characteristics Fig a. Single Event Effect, Safe Operating Area International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. For footnotes refer to the last page Table 2. Single Event Effect Safe Operating Area Ion LET Energy Range VDS (V) (MeV/(mg/cm2)) (MeV) (µm) @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= 0V -5V -10V -15V -17V -19V -20V Br 36.7 309 39.5 100 100 100 100 100 100 40 I 59.8 341 32.5 100 100 100 30 - - - Au 82.3 350 28.4 100 100 - - - - - 0 20 40 60 80 100 120 -20 -15 -10 -5 0 VGS Br I Au Part numbers IRHYB67130CM and IRHYB63130CM Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ Parameter Up to 300K Rads (Si) Units Test Conditions Min Max BVDSS Drain-to-Source Breakdown Voltage 100 — V VGS = 0V, ID = 1.0mA VGS(th) Gate Threshold Voltage 2.0 4.0 VGS = VDS, ID = 1.0mA IGSS Gate-to-Source Leakage Forward — 100 nA VGS = 20V IGSS Gate-to-Source Leakage Reverse — -100 VGS = -20V IDSS Zero Gate Voltage Drain Current — 10 µA VDS= 80V, VGS=0V RDS(on) Static Drain-to-Source On-State Resistance (TO-3) — 0.044 Ω VGS = 12V, ID = 19A RDS(on) Static Drain-to-Source On-State VSD Diode Forward Voltage — 1.2 V VGS = 0V, ID = 20A Resistance (Low Ohmic TO-257) — 0.042 Ω VGS = 12V, ID = 19A |
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