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SB1630CT 데이터시트(PDF) 1 Page - Won-Top Electronics |
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SB1630CT 데이터시트(HTML) 1 Page - Won-Top Electronics |
1 / 4 page SB1620CT – SB16100CT 1 of 4 © 2006 Won-Top Electronics Pb SB1620CT – SB16100CT 16A DUAL SCHOTTKY BARRIER RECTIFIER Features ! Schottky Barrier Chip B ! Guard Ring for Transient Protection ! Low Forward Voltage Drop C ! Low Reverse Leakage Current ! High Surge Current Capability G A ! Plastic Material has UL Flammability Classification 94V-O PIN1 2 3 D Mechanical Data F E ! Case: TO-220, Molded Plastic ! Terminals: Plated Leads Solderable per P MIL-STD-202, Method 208 ! Polarity: See Diagram I ! Weight: 2.24 grams (approx.) ! Mounting Position: Any H L ! Mounting Torque: 11.5 cm-kg (10 in-lbs) Max. ! Lead Free: For RoHS / Lead Free Version, Add “-LF” Suffix to Part Number, See Page 4 PIN 1 - + J PIN 3 - Case, PIN 2 K Maximum Ratings and Electrical Characteristics @T A=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol SB 1620CT SB 1630CT SB 1640CT SB 1645CT SB 1650CT SB 1660CT SB 1680CT SB 16100CT Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 20 30 40 45 50 60 80 100 V RMS Reverse Voltage VR(RMS) 14 21 28 32 35 42 56 70 V Average Rectified Output Current @TC = 95°C IO 16 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 150 A Forward Voltage @IF = 8.0A VFM 0.55 0.75 0.85 V Peak Reverse Current @TA = 25°C At Rated DC Blocking Voltage @TA = 100°C IRM 0.5 100 mA Typical Junction Capacitance (Note 1) Cj 700 pF Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. WTE POWER SEMICONDUCTORS TO-220 Dim Min Max A 13.90 15.90 B 9.80 10.70 C 2.54 3.43 D 3.56 4.56 E 12.70 14.73 F 0.51 0.96 G 3.55 Ø 4.09 Ø H 5.75 6.85 I 4.16 5.00 J 2.03 2.92 K 0.30 0.65 L 1.14 1.40 P 2.29 2.79 All Dimensions in mm |
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