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TDA1015 데이터시트(PDF) 5 Page - NXP Semiconductors |
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TDA1015 데이터시트(HTML) 5 Page - NXP Semiconductors |
5 / 13 page November 1982 5 Philips Semiconductors Product specification 1 to 4 W audio power amplifier TDA1015 D.C. CHARACTERISTICS A.C. CHARACTERISTICS Tamb = 25 °C; VP = 12 V; RL = 4 Ω; f = 1 kHz unless otherwise specified; see also Fig.3. Supply voltage range VP 3,6 to 18 V Repetitive peak output current IORM <2 A Total quiescent current at VP = 12 V Itot typ. 14 mA <25 mA A.F. output power at dtot = 10% (note 1) with bootstrap: VP = 12 V; RL = 4 Ω Po typ. 4,2 W VP = 9 V; RL = 4 Ω Po typ. 2,3 W VP = 6 V; RL = 4 Ω Po typ. 1,0 W without bootstrap: VP = 12 V; RL = 4 Ω Po typ. 3,0 W Voltage gain: preamplifier (note 2) Gv1 typ. 23 dB power amplifier Gv2 typ. 29 dB total amplifier Gv tot typ. 52 dB 49 to 55 dB Total harmonic distortion at Po = 1,5 W dtot typ. 0,3 % < 1,0 % Frequency response; −3 dB (note 3) B 60 Hz to 15 kHz Input impedance: preamplifier (note 4) |Zi1| > 100 k Ω typ. 200 k Ω power amplifier |Zi2| typ. 20 k Ω Output impedance preamplifier |Zo1| typ. 1 k Ω Output voltage preamplifier (r.m.s. value); dtot < 1% (note 2) Vo(rms) typ. 0,8 V Noise output voltage (r.m.s. value; note 5) RS = 0 Ω Vn(rms) typ. 0,2 mV RS = 10 kΩ Vn(rms) typ. 0,5 mV Noise output voltage at f = 500 kHz (r.m.s. value); B = 5 kHz; RS = 0 Ω Vn(rms) typ. 8 µV Ripple rejection (note 6); f = 100 Hz RR typ. 38 dB |
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