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TDA1020 데이터시트(Datasheet) 5 Page - NXP Semiconductors

부품명 TDA1020
상세내용  12 W car radio power amplifier
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제조사  PHILIPS [NXP Semiconductors]
홈페이지  http://www.nxp.com
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 5 page
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November 1982
5
Preliminary Specification
Philips Semiconductors
Product specification
12 W car radio power amplifier
TDA1020
HEATSINK DESIGN EXAMPLE
The derating of 8 K/W of the encapsulation requires the following external heatsink (for sine-wave drive):
10 W in 2
Ω at V
P = 14,4 V
maximum sine-wave dissipation: 5,2 W
Tamb = 60 °C maximum
Since Rth j-tab + Rth tab-h = 8 K/W, Rth h-a = 17,3 − 8 ≈ 9 K/W.
D.C. CHARACTERISTICS
A.C. CHARACTERISTICS
Tamb = 25 °C; VP = 14,4 V; RL = 4 Ω; f = 1 kHz; unless otherwise specified; see also Fig.3
Supply voltage range (pin 3)
VP
6 to 18 V
Repetitive peak output current
IORM
<4 A
Total quiescent current
at VP = 14,4 V
Itot
typ.
30 mA
at VP = 18 V
Itot
typ.
40 mA
Output power at dtot = 10%; with bootstrap (note 1)
VP = 14,4 V; RL = 2 Ω
Po
>10 W
typ.
12 W
VP = 14,4 V; RL = 4 Ω
Po
>6 W
typ.
7 W
VP = 14,4 V; RL = 8 Ω
Po
typ.
3,5 W
Output power at dtot = 1%; with bootstrap (note 1)
VP = 14,4 V; RL = 2 Ω
Po
typ.
9,5 W
VP = 14,4 V; RL = 4 Ω
Po
typ.
6 W
VP = 14,4 V; RL = 8 Ω
Po
typ.
3 W
Output voltage (r.m.s. value)
RL = 1 kΩ; dtot = 0,5%
Vo(rms)
typ.
5 V
Output power at dtot = 10%; without bootstrap
Po
>
4,5 W
Voltage gain
preamplifier (note 2)
Gv1
typ.
17,7 dB
16,7 to 18,7 dB
power amplifier
Gv2
typ.
29,5 dB
28,5 to 30,5 dB
total amplifier
Gv tot
typ.
47 dB
46,2 to 48,2 dB
R
th j-a
R
th j-tab
R
th tab-h
R
th h-a
150
60
52
,
----------------------
17,3 K/W
==
++
=




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