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TDA1300T 데이터시트(Datasheet) 7 Page - NXP Semiconductors

부품명 TDA1300T
상세내용  Photodetector amplifiers and laser supplies
PDF  20 Pages
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제조사  PHILIPS [NXP Semiconductors]
홈페이지  http://www.nxp.com
Logo 

 7 page
background image
1997 Jul 15
7
Philips Semiconductors
Preliminary specification
Photodetector amplifiers and laser
supplies
TDA1300T; TDA1300TT
THERMAL CHARACTERISTICS
QUALITY SPECIFICATION
In accordance with
“SNW-FQ-611 part E”. The numbers of the quality specification can be found in the “Quality
Reference Handbook”. The handbook can be ordered using the code 9397 750 00192.
CHARACTERISTICS
VDD = 3.3 V; VDDL = 2.5 V; Tamb =25 °C; RADJ =48kΩ; HG = logic 1; LS = logic 1; with an external low-pass filter
(Rext = 750 Ω; Cext = 47 pF) connected at the RFE output pin.
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient in free air
TDA1300T
60
K/W
TDA1300TT
128
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supply
IDD
supply current
laser off
7
mA
VDD
amplifier supply voltage
3
5.5
V
VDDL
laser control supply voltage
2.5
5.5
V
P
power dissipation
laser off; VDD =3V
20
mW
Diode current amplifiers (n = 1 to 6; m = 1 to 6)
Ii(d)
diode input current
note 1
−−
10
µA
In(i)(eq)
equivalent noise input current
1
pA/
√Hz
Vi(d)
diode input voltage
Ii(d) = 1.67 µA
0.9
V
Vo(d)
diode output voltage
−0.2
VDD − 1V
Gd(n)
diode current gain
Ii(d) = 1.67 µA;
Vo(d(n)) = 0 V; note 2
1.43
1.55
1.67
IO(d)
diode offset current
Ii(central) =Ii(satellite) =0;
note 3
−−
100
nA
Zo(d)
output impedance
Ii(d) = 1.67 µA;
Vo(d(n)) =0V
500
−−
k
B
3 dB bandwidth
Ii(d) = 1.67 µA50
68
kHz
Gmm
mismatch in gain between
amplifiers
Ii(d) = 1.67 µA;
Vo(d(n)) =Vo(d(m))
−−
3%




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