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TDA1300TT 데이터시트(Datasheet) 9 Page - NXP Semiconductors

부품명 TDA1300TT
상세내용  Photodetector amplifiers and laser supplies
PDF  20 Pages
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제조사  PHILIPS [NXP Semiconductors]
홈페이지  http://www.nxp.com
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 9 page
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1997 Jul 15
9
Philips Semiconductors
Preliminary specification
Photodetector amplifiers and laser
supplies
TDA1300T; TDA1300TT
Notes to the characteristics
1. The maximum input current is defined as the current in which the gain Gd(n) reaches its minimum. Increasing the
supply voltage to VDD = 5 V increases the maximum input current (see also Figs 4 and 5).
2. The gain increases if a larger supply voltage is used (see Fig.6).
3. Transresistance of 70 k
Ω and 120 kΩ (typical) is only available in N-sub monitor mode (see Table 1).
4. Transresistance of 140 k
Ω and 240 kΩ (typical) is only available in P-sub monitor mode (see Table 1).
5. Output voltage swing will be: VO(RF)(swing) =VO(RF)(max) − VO(RF)(p-p).
6. For single speed the data amplifier gain ratio is defined as gain difference between 1 MHz and 100 kHz, while the
flatness delay is defined up to 1 MHz (see Fig.7). For double speed the data amplifier gain ratio is defined as gain
difference between 2 MHz and 200 kHz, while the flatness delay is defined up to 2 MHz.
Reference source VADJ and laser adjustment current IADJ
Vref
reference voltage
RADJ =48kΩ
1.15
1.24
1.31
mV
∆T
reference temperature drift
40
ppm
RSref
reference supply rejection
−−
1%
IADJ
adjustment current
RADJ = 5.6 kΩ−
200
µA
Zi
input impedance
RADJ = 4.8 kΩ−
1
k
M
multiplying factor (Imon/IADJ)
10
−−
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT




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