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TDA1302T 데이터시트(Datasheet) 6 Page - NXP Semiconductors

부품명 TDA1302T
상세내용  Data amplifier and laser supply circuit for CD player and read only optical systems
PDF  18 Pages
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제조사  PHILIPS [NXP Semiconductors]
홈페이지  http://www.nxp.com
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 6 page
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TDA1302_1
7 Wed Sep 14 13:30:56 1994
September 1994
7
Philips Semiconductors
Preliminary specification
Data amplifier and laser supply circuit for
CD player and read only optical systems
TDA1302T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
HANDLING
Classification A: human body model; C = 100 pF; R = 1500
Ω; V = ± 2000 V.
Charge device model: C = 200 pF; L = 2.5
µH; R = 0 Ω; V = 250 V.
THERMAL RESISTANCE
QUALITY SPECIFICATION
In accordance with
“SNW-FQ-611 part E”. The numbers of the quality specification can be found in the “Quality
Reference Handbook”. The handbook can be ordered using the code 9398 510 63011.
CHARACTERISTICS
VDD = 3.4 V; VDDL = 2.5 V; Tamb = 25 °C; RADJ = 48 kΩ; HG = logic 1; LS = logic 1; with an external LP filter
(Rext = 750 Ω, Cext = 47 pF) at pin 9; unless otherwise specified.
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VDD
supply voltage
8.0
V
Ptot
total power dissipation
300
mW
Tstg
storage temperature
−65
+150
°C
Tamb
operating ambient temperature
−40
+85
°C
SYMBOL
PARAMETER
THERMAL RESISTANCE
Rth j-a
from junction to ambient in free air
60 K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supply
IDD
amplifier supply current
laser OFF
8
mA
VDD
amplifier supply voltage
3.4
5.5
V
VDDL
laser control supply voltage
2.5
5.5
V
Pdiss
power dissipation
laser OFF; VDD = 3.4 V
27
mW
Diode current amplifiers (1 to 6)
Ii(d)
diode input current
note 1
10
µA
Neq
equivalent noise input
1
pA/
√Hz
Vi(d)
diode input voltage
Ii(d) = 1.67 µA
0.9
V
Vo(d)
diode output voltage
−0.2
VDD − 1
V
Gdn
amplification
Ii(d) = 1.67 µA;
Vo(dn) = 0 V; note 2
1.43
1.55
1.67
dB
Ios(d)
diode output offset current
Icsin = Itsin = 0; note 3
100
nA
Zo(d)
output impedance
Idi = 1.67 µA; Vo(dn) = 0 V
500
k
B
3 dB bandwidth
Ii(d) = 1.67 µA
50
68
kHz
Gmm
mismatch in amplification
Idi = 1.67 µA;
Vo(dn) = Vo(dm)
3
%




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