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TDA1563Q 데이터시트(PDF) 6 Page - NXP Semiconductors |
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TDA1563Q 데이터시트(HTML) 6 Page - NXP Semiconductors |
6 / 32 page 2000 Feb 09 6 Philips Semiconductors Product specification 2 × 25 W high efficiency car radio power amplifier TDA1563Q LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). THERMAL CHARACTERISTICS Note 1. The value of Rth(c-h) depends on the application (see Fig.3). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VP supply voltage operating − 18 V non-operating − 30 V load dump; tr > 2.5 ms − 45 V VP(sc) short-circuit safe voltage − 18 V Vrp reverse polarity voltage − 6V IORM repetitive peak output current − 4A Ptot total power dissipation − 60 W Tstg storage temperature −55 +150 °C Tvj virtual junction temperature − 150 °C Tamb ambient temperature −40 −°C SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth(j-c) thermal resistance from junction to case see note 1 1.3 K/W Rth(j-a) thermal resistance from junction to ambient 40 K/W Heatsink design There are two parameters that determine the size of the heatsink. The first is the rating for the virtual junction temperature and the second is the ambient temperature at which the amplifier must still deliver its full power in the BTL mode. With a conventional BTL amplifier, the maximum power dissipation with a music-like signal (at each amplifier) will be approximately two times 6.5 W. At a virtual junction temperature of 150 °C and a maximum ambient temperature of 65 °C, Rth(vj-c) = 1.3 K/W and Rth(c-h) = 0.2 K/W, the thermal resistance of the heatsink should be: Compared to a conventional BTL amplifier, the TDA1563Q has a higher efficiency. The thermal resistance of the heatsink should be: 150 65 – 2 6.5 × ---------------------- 1.3 – 0.2 – 5 K/W = 150 65 – 2 6.5 × ---------------------- 1.3 – 0.2 – 5 K/W = 1.7 145 65 – 2 6.5 × ---------------------- 1.3 – 0.2 – 9 K/W = handbook, halfpage 3.6 K/W 0.6 K/W 3.6 K/W virtual junction OUT 1 OUT 1 case 3.6 K/W 0.6 K/W 3.6 K/W OUT 2 OUT 2 MGC424 0.1 K/W Fig.3 Thermal equivalent resistance network. |
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