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TDA1563Q 데이터시트(Datasheet) 7 Page - NXP Semiconductors

부품명 TDA1563Q
상세내용  2 x 25 W high efficiency car radio power amplifier
PDF  32 Pages
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제조사  PHILIPS [NXP Semiconductors]
홈페이지  http://www.nxp.com
Logo 

 7 page
background image
2000 Feb 09
7
Philips Semiconductors
Product specification
2
× 25 W high efficiency car radio power
amplifier
TDA1563Q
DC CHARACTERISTICS
VP = 14.4 V; Tamb =25 °C; measured in Fig.7; unless otherwise specified.
Notes
1. The circuit is DC biased at VP = 6 to 18 V and AC operating at VP =8to18V.
2. If the junction temperature exceeds 150
°C, the output power is limited to 5 W per channel.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
Supplies
VP
supply voltage
note 1
6
14.4
18
V
Iq(tot)
total quiescent current
RL = ∞−
95
150
mA
Istb
standby current
150
µA
VC
average electrolytic capacitor voltage at pin 4
7.1
V
∆V
O
DC output offset voltage
on state
−−
100
mV
mute state
−−
100
mV
Mode select switch (see Fig.4)
Vms
voltage at mode select pin (pin 6)
standby condition
0
1V
mute condition
2
3V
operating condition
4
5
VP
V
Ims
switch current through pin 6
Vms =5V
25
40
µA
Diagnostic
Vdiag
output voltage at diagnostic outputs (pins 14 and
15): protection/temperature and detection
during any fault condition
−−
0.5
V
Idiag
current through pin 14 or 15
during any fault condition
2
−−
mA
VSC
input voltage at selectable clip pin (pin 12)
clip detect at THD = 10%
−−
0.5
V
clip detect at THD = 2.5% 1.5
18
V
Protection
Tpre
prewarning temperature
145
−°C
Tdis(BTL)
BTL disable temperature
note 2
150
−°C




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