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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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1N5187US 데이터시트(PDF) 1 Page - Microsemi Corporation |
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1N5187US 데이터시트(HTML) 1 Page - Microsemi Corporation |
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1 / 2 page  VOIDLESS-HERMETICALLY SEALED SURFACE MOUNT FAST RECOVERY GLASS RECTIFIERS SCOTTSD A L E DIVISION 1N5186US thru 1N5190US DESCRIPTION APPEARANCE This “fast recovery” rectifier diode series is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 3.0 Amp rated rectifiers for working peak reverse voltages from 100 to 600 volts are hermetically sealed with voidless-glass construction using an internal “Category I” metallurgical bond. These devices are also available in military qualified axial-leaded packages by deleting the “US” suffix. Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including fast and ultrafast device types in both through-hole and surface mount packages. Package “E” or D-5B IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com FEATURES APPLICATIONS / BENEFITS • Surface mount equivalent to the popular JEDEC registered 1N5186 to 1N5190 series • Voidless hermetically sealed glass package • Triple-Layer Passivation • Internal “Category I” Metallurgical bonds • Working Peak Reverse Voltage 100 to 600 Volts. • Further options in screening in accordance with MIL- PRF-19500/424 for JAN, JANTX, and JANTXV by adding a MQ, MX, or MV prefix respectively, e.g. MX1N5186US, MV1N5187US, etc. • Axial-leaded package equivalents also available (see separate data sheet for 1N5186 thru 1N5190) • Fast recovery 3 Amp rectifiers 100 to 600 V • Military and other high-reliability applications • General rectifier applications including bridges, half-bridges, catch diodes, etc. • High forward surge current capability • Extremely robust construction • Low thermal resistance • Controlled avalanche with peak reverse power capability • Inherently radiation hard as described in Microsemi MicroNote 050 MAXIMUM RATINGS MECHANICAL AND PACKAGING • Junction & Storage Temperature: -65oC to +175oC • Thermal Resistance: 10oC/W junction to end cap • Thermal Impedance: 1.5oC/W @ 10 ms heating time • Average Rectified Forward Current (IO): 3.0 Amps @ TA = 25ºC and 0.700 Amps at TA = 150ºC • Forward Surge Current: 80 Amps @ 8.3 ms half-sine • Solder Temperatures: 260ºC for 10 s (maximum) • CASE: Hermetically sealed voidless hard glass with Tungsten slugs • TERMINATIONS: End caps are solid silver with Tin/Lead (Sn/Pb) finish • MARKING: Cathode band only • POLARITY: Cathode indicated by band • TAPE & REEL option: Standard per EIA-481-B • WEIGHT: 539 mg • See package dimensions on last page ELECTRICAL CHARACTERISTICS WORKING PEAK REVERSE VOLTAGE VRWM MINIMUM BREAKDOWN VOLTAGE VBR @ 50µA FORWARD VOLTAGE VF @ 9A (pulsed) MAXIMUM REVERSE CURRENT IR @ VRWM MAXIMUM REVERSE RECOVERY TIME trr AVERAGE RECTIFIED CURRENT AMPS IO 25 oC 100 oC 25 oC 150 oC TYPE VOLTS VOLTS MIN VOLTS MAX VOLTS µA µA ns AMPS AMPS 1N5186US 1N5187US 1N5188US 1N5189US 1N5190US 100V 200V 400V 500V 600V 120V 240V 480V 550V 660V 0.9V 1.5V 2.0 100 150 200 250 300 400 3.0 3.0 3.0 3.0 3.0 0.7 0.7 0.7 0.7 0.7 Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 1 Copyright 2004 12-10-2004 REV A |
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