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TDA8581 데이터시트(PDF) 9 Page - NXP Semiconductors |
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TDA8581 데이터시트(HTML) 9 Page - NXP Semiconductors |
9 / 20 page 1998 May 27 9 Philips Semiconductors Preliminary specification Multi-purpose high-gain power amplifier TDA8581 Notes to the characteristics 1. Hysteresis between rise and fall voltage. 2. At lower VP the voltage at the STANDBY pin for ‘on’ condition will be adjusted automatically to maintain an ‘on’ condition at low battery voltage (down to 8 V) when using one-pin operation. 3. The noise output is measured in a bandwidth of 20 Hz to 20 kHz. Table 1 Selection of ‘standby’, ‘mute’ and ‘on’. Gv voltage gain Vo(rms) = 3 V 38 40 42 dB α cs channel separation Po =2W; fi = 1 kHz; RL =4 Ω 40 46 − dB ∆G v channel unbalance −− 1dB Voffset(DC) DC output offset voltage VP = 14.4 V; ‘on’ condition − 0 100 mV VP = 14.4 V; ‘mute’ condition; RL =4 Ω − 10 20 mV Vno noise output voltage Rs =1kΩ; VP = 14.4 V; note 3 − 160 280 µV Vno(mute) noise output voltage mute note 3 − 020 µV Vo(mute) output voltage mute Vi(rms) =1V − 15 1500 µV SVRR supply voltage ripple rejection fi = 1 kHz; Vripple(p-p) = 2 V, ‘on’ or ‘mute’ condition; Rs =0 Ω 42 −− dB Zi input impedance 46 60 74 k Ω CMRR common mode rejection ratio Vi(rms) = 0.5 V; fi = 1 kHz; Rs =0 Ω − 40 − dB VOLTAGE AT PIN 5 VOLTAGE AT PIN 13 FUNCTION V5 < 0.8 V don’t care ‘standby’ (off) 2V<V5 < 5.3 V V13 < 1 V ‘mute’ (DC settled) 2V<V5 < 5.3 V 3.5 V < V13 < 5.3 V ‘on’ (AC operating) V5 ≥ 8.0 V don’t care ‘on’ (AC operating) SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT |
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