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TDA8581 데이터시트(PDF) 9 Page - NXP Semiconductors

부품명 TDA8581
상세설명  Multi-purpose high-gain power amplifier
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제조업체  PHILIPS [NXP Semiconductors]
홈페이지  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

TDA8581 데이터시트(HTML) 9 Page - NXP Semiconductors

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1998 May 27
9
Philips Semiconductors
Preliminary specification
Multi-purpose high-gain power amplifier
TDA8581
Notes to the characteristics
1. Hysteresis between rise and fall voltage.
2. At lower VP the voltage at the STANDBY pin for ‘on’ condition will be adjusted automatically to maintain an
‘on’ condition at low battery voltage (down to 8 V) when using one-pin operation.
3. The noise output is measured in a bandwidth of 20 Hz to 20 kHz.
Table 1
Selection of ‘standby’, ‘mute’ and ‘on’.
Gv
voltage gain
Vo(rms) = 3 V
38
40
42
dB
α
cs
channel separation
Po =2W; fi = 1 kHz; RL =4 Ω
40
46
dB
∆G
v
channel unbalance
−−
1dB
Voffset(DC)
DC output offset voltage
VP = 14.4 V; ‘on’ condition
0
100
mV
VP = 14.4 V; ‘mute’ condition;
RL =4 Ω
10
20
mV
Vno
noise output voltage
Rs =1kΩ; VP = 14.4 V; note 3
160
280
µV
Vno(mute)
noise output voltage mute
note 3
020
µV
Vo(mute)
output voltage mute
Vi(rms) =1V
15
1500
µV
SVRR
supply voltage ripple rejection
fi = 1 kHz; Vripple(p-p) = 2 V, ‘on’
or ‘mute’ condition; Rs =0 Ω
42
−−
dB
Zi
input impedance
46
60
74
k
CMRR
common mode rejection ratio
Vi(rms) = 0.5 V; fi = 1 kHz;
Rs =0 Ω
40
dB
VOLTAGE AT PIN 5
VOLTAGE AT PIN 13
FUNCTION
V5 < 0.8 V
don’t care
‘standby’ (off)
2V<V5 < 5.3 V
V13 < 1 V
‘mute’ (DC settled)
2V<V5 < 5.3 V
3.5 V < V13 < 5.3 V
‘on’ (AC operating)
V5 ≥ 8.0 V
don’t care
‘on’ (AC operating)
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT


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