2SJ687 datasheet(1/8 Pages) NEC

부품명	2SJ687

상세설명	MOS FIELD EFFECT TRANSISTOR

Download	8 Pages

Scroll/Zoom	100%

제조업체	NEC [NEC]

홈페이지	http://www.nec.com/

Logo

1 / 8 page

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

MOS FIELD EFFECT TRANSISTOR

2SJ687

SWITCHING

P-CHANNEL POWER MOSFET

DATA SHEET

Document No. D18719EJ2V0DS00 (2nd edition)

Date Published May 2007 NS

Printed in Japan

2007

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

DESCRIPTION

The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage.

FEATURES

• Low on-state resistance

RDS(on)1 = 7.0 m

Ω MAX. (VGS = −4.5 V, ID = −10 A)

RDS(on)2 = 9.0 m

Ω MAX. (VGS = −3.0 V, ID = −10 A)

RDS(on)3 = 20 m

Ω MAX. (VGS = −2.5 V, ID = −10 A)

• 2.5 V drive available

• Avalanche capability ratings

ORDERING INFORMATION

PART NUMBER

LEAD PLATING

PACKING

PACKAGE

2SJ687-ZK-E1-AY

Note

2SJ687-ZK-E2-AY

Note

Pure Sn (Tin)

Tape 2500 p/reel

TO-252 (MP-3ZK)

0.27 g TYP.

Note Pb-free (This product does not contain Pb in external electrode.)

ABSOLUTE MAXIMUM RATINGS (TA = 25

°C)

Drain to Source Voltage (VGS = 0 V)

VDSS

−20

V

Gate to Source Voltage (VDS = 0 V)

VGSS

m12

V

Drain Current (DC) (TC = 25

°C)

ID(DC)

m20

A

Drain Current (pulse)

Note1

ID(pulse)

m60

A

Total Power Dissipation (TC = 25

°C)

PT1

36

W

Total Power Dissipation (TA = 25

°C)

PT2

1.0

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

−55 to +150

°C

Single Avalanche Current

Note2

IAS

−20

A

Single Avalanche Energy

Note2

EAS

40

mJ

Notes 1. PW

≤ 10

μs, Duty Cycle ≤ 1%

2. Starting Tch = 25

°C, VDD = −10 V, RG = 25 Ω, VGS = −12 → 0 V

(TO-252)

유사한 부품 번호 - 2SJ687

제조업체	부품명	데이터시트	상세설명
Renesas Technology Corp	2SJ687	276Kb / 10P	MOS FIELD EFFECT TRANSISTOR 2007
VBsemi Electronics Co.,...	2SJ687-ZK-E1-AY	1Mb / 8P	P-Channel 30 V (D-S) MOSFET
Renesas Technology Corp	2SJ687-ZK-E1-AY	276Kb / 10P	MOS FIELD EFFECT TRANSISTOR 2007
	2SJ687-ZK-E2-AY	276Kb / 10P	MOS FIELD EFFECT TRANSISTOR 2007
	2SJ687	277Kb / 10P	SWITCHING P-CHANNEL POWER MOS FET

More results

유사한 설명 - 2SJ687

제조업체	부품명	데이터시트	상세설명
NEC	2SK815	176Kb / 4P	MOS FIELD EFFECT TRANSISTOR
	NP36P04KDG	189Kb / 7P	MOS FIELD EFFECT TRANSISTOR
	2SJ624	71Kb / 8P	MOS FIELD EFFECT TRANSISTOR
	2SJ603	79Kb / 8P	MOS FIELD EFFECT TRANSISTOR
Renesas Technology Corp	NP180N04TUK	253Kb / 8P	MOS FIELD EFFECT TRANSISTOR
	2SK3353	224Kb / 10P	MOS FIELD EFFECT TRANSISTOR
	NP60N04VUK	110Kb / 8P	MOS FIELD EFFECT TRANSISTOR
	NP89N055PUK	112Kb / 8P	MOS FIELD EFFECT TRANSISTOR
	NP90N04VUK	111Kb / 8P	MOS FIELD EFFECT TRANSISTOR
	NP160N04TUK	235Kb / 8P	MOS FIELD EFFECT TRANSISTOR
	NP160N055TUK	112Kb / 8P	MOS FIELD EFFECT TRANSISTOR

More results

2SJ687 데이터시트(PDF) 1 Page - NEC

2SJ687 데이터시트(HTML) 1 Page - NEC

유사한 부품 번호 - 2SJ687

유사한 설명 - 2SJ687

Html Pages

1 2 3 4 5 6 7 8

데이터시트 다운로드

링크 URL