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2SJ687 데이터시트(PDF) 1 Page - NEC |
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2SJ687 데이터시트(HTML) 1 Page - NEC |
1 / 8 page The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. MOS FIELD EFFECT TRANSISTOR 2SJ687 SWITCHING P-CHANNEL POWER MOSFET DATA SHEET Document No. D18719EJ2V0DS00 (2nd edition) Date Published May 2007 NS Printed in Japan 2007 The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. DESCRIPTION The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage. FEATURES • Low on-state resistance RDS(on)1 = 7.0 m Ω MAX. (VGS = −4.5 V, ID = −10 A) RDS(on)2 = 9.0 m Ω MAX. (VGS = −3.0 V, ID = −10 A) RDS(on)3 = 20 m Ω MAX. (VGS = −2.5 V, ID = −10 A) • 2.5 V drive available • Avalanche capability ratings ORDERING INFORMATION PART NUMBER LEAD PLATING PACKING PACKAGE 2SJ687-ZK-E1-AY Note 2SJ687-ZK-E2-AY Note Pure Sn (Tin) Tape 2500 p/reel TO-252 (MP-3ZK) 0.27 g TYP. Note Pb-free (This product does not contain Pb in external electrode.) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage (VGS = 0 V) VDSS −20 V Gate to Source Voltage (VDS = 0 V) VGSS m12 V Drain Current (DC) (TC = 25 °C) ID(DC) m20 A Drain Current (pulse) Note1 ID(pulse) m60 A Total Power Dissipation (TC = 25 °C) PT1 36 W Total Power Dissipation (TA = 25 °C) PT2 1.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Single Avalanche Current Note2 IAS −20 A Single Avalanche Energy Note2 EAS 40 mJ Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Starting Tch = 25 °C, VDD = −10 V, RG = 25 Ω, VGS = −12 → 0 V (TO-252) |
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