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GJSD1803 ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 1 Page - GTM CORPORATION

๋ถ€ํ’ˆ๋ช… GJSD1803
์ƒ์„ธ๋‚ด์šฉ  NPN EPITAXIAL PLANAR SILICON TRANSISTOR
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์ œ์กฐ์‚ฌ  GTM [GTM CORPORATION]
ํ™ˆํŽ˜์ด์ง€  http://www.gtm.com.tw
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GJSD1803 ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 1 Page - GTM CORPORATION

   
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GJSD1803
Page: 1/3
ISSUED DATE :2003/10/22
REVISED DATE :2005/01/13B
G
G JJS
S D
D 11880033
N
N P
P N
N E
E P
P II T
T A
A X
X II A
A L
L P
P L
L A
A N
N A
A R
R S
S II L
L II C
C O
O N
N T
T R
R A
A N
N S
S II S
S T
T O
O R
R
Description
The GJSD1803 applies to relay drivers, high-speed inverters, converters, and other general high-current
switching applications.
Features
*Low collector-to-emitter saturation voltage.
*High current and high fT
*Excellent linearity of hFE
*Fast switching time
Package Dimensions
Millimeter
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
6.40
6.80
G
0.50
0.70
B
5.20
5.50
H
2.20
2.40
C
6.80
7.20
J
0.45
0.55
D
2.40
3.00
K
0
0.15
E
2.30 REF.
L
0.90
1.50
F
0.70
0.90
M
5.40
5.80
S
0.60
0.90
R
0.80
1.20
Absolute Maximum Ratings (Ta = 25 : , unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
:
Storage Temperature
Tstg
-55 ~ +150
:
Collector to Base Voltage
VCBO
60
V
Collector to Emitter Voltage
VCEO
50
V
Emitter to Base Voltage
VEBO
6
V
Collector Current(DC)
IC
5
A
Collector Current(Pulse)
ICP
8
A
PD
1
W
Collector Dissipation
Tc=25 :
20
W
Electrical Characteristics (Ta = 25 : unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
V(BR)CBO
60
-
-
V
IC=10uA, IE=0
V(BR)CEO
50
-
-
V
IC=1mA, RBE=
V(BR)EBO
6
-
-
V
IE=10uA, IC=0
ICBO
-
-
1
uA
VCB=40V, IE=0
IEBO
-
-
1
uA
VEB=4V, IC=0
VCE(sat)
-
0.22
0.4
V
IC=3A, IB=0.15A
VBE(sat)
-
0.95
1.3
V
IC=3A, IB=0.15A
hFE1
70
-
400
VCE=2V, IC=0.5A
hFE2
35
-
-
VCE=2V, IC=4A
fT
-
180
-
MHZ
VCE=5V,IC=1A
ton
-
50
-
ns
See test circuit
tstg
-
500
-
ns
See test circuit
tf
-
20
-
ns
See test circuit
Cob
-
40
-
pF
VCB=10V, f=1MHz
TO-252


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