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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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RJK6014DPP 데이터시트(HTML) 2 Page - Renesas Technology Corp |
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RJK6014DPP 데이터시트(HTML) 2 Page - Renesas Technology Corp |
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RJK6014DPP REJ03G1531-0100 Rev.1.00 Apr 17, 2007 Page 2 of 3 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V(BR)DSS 600 — — V ID = 10 mA, VGS = 0 Zero gate voltage drain current IDSS — — 1 µA VDS = 600 V, VGS = 0 Gate to source leak current IGSS — — ±0.1 µA VGS = ±30 V, VDS = 0 Gate to source cutoff voltage VGS(off) 3.0 — 4.5 V VDS = 10 V, ID = 1 mA Static drain to source on state resistance RDS(on) — 0.475 0.575 Ω ID = 8 A, VGS = 10 V Note5 Input capacitance Ciss — 1800 — pF Output capacitance Coss — 170 — pF Reverse transfer capacitance Crss — 20 — pF VDS = 25 V VGS = 0 f = 1 MHz Turn-on delay time td(on) — 36 — ns Rise time tr — 29 — ns Turn-off delay time td(off) — 93 — ns Fall time tf — 20 — ns ID = 8 A VGS = 10 V RL = 37.5 Ω Rg = 10 Ω Total gate charge Qg — 45 — nC Gate to source charge Qgs — 9 — nC Gate to drain charge Qgd — 20 — nC VDD = 480 V VGS = 10 V ID = 16 A Body-drain diode forward voltage VDF — 0.91 1.50 V IF = 16 A, VGS = 0 Note5 Body-drain diode reverse recovery time trr — 390 — ns IF = 16 A, VGS = 0 diF/dt = 100 A/ µs Notes: 5. Pulse test |
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