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TEA1206 데이터시트(PDF) 3 Page - NXP Semiconductors

부품명 TEA1206
상세설명  High efficiency DC/DC converter
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제조업체  PHILIPS [NXP Semiconductors]
홈페이지  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

TEA1206 데이터시트(HTML) 3 Page - NXP Semiconductors

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1999 Sep 16
3
Philips Semiconductors
Preliminary specification
High efficiency DC/DC converter
TEA1206T
QUICK REFERENCE DATA
Note
1. Current limit is defined by an external resistor Rlim, having 1% accuracy. The typical value is presettable between
0.5 and 5.0 A with a spread of
±17.5%.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Voltage levels
VO(up)
output voltage range in up mode
U/D = LOW
2.80
5.50
V
VO(down)
output voltage range in down mode
U/D = HIGH
1.25
5.50
V
Vi(up)
input voltage range in up mode
U/D = LOW
Vstart
5.50
V
Vi(down)
input voltage range in down mode
U/D = HIGH
2.80
5.50
V
Vstart
start-up voltage
up mode; IL < 200 mA
1.40
1.60
1.85
V
Vfb
feedback voltage level
1.19
1.24
1.29
V
Current levels
Iq
quiescent current at pin 3
down mode, Vi = 3.6 V
65
75
85
µA
Ishdwn
shut-down current
210
µA
IlimN
current limit NFET
up mode; note 1
0.5
5.0
A
IlimP
current limit PFET
down mode; note 1
0.5
5.0
A
ILx
maximum continuous current at pin 4
−−
1.0
A
Power MOSFETS
RdsON(N)
pin-to-pin resistance NFET
0.08
0.14
0.20
RdsON(P)
pin-to-pin resistance PFET
0.10
0.16
0.25
Efficiency; see Fig.5
η
efficiency
Vi = 3.6 V; L = 10 µH
−−−
Vi = 3.6 up to 4.6 V
IL =1mA
86
%
IL =10mA
93
%
IL =50mA
93
%
IL = 100 mA
93
%
IL = 500 mA
93
%
IL = 1000 mA; pulsed
load current
87
%
Vi = 3.6 down to 1.8 V
IL =1mA
83
%
IL =10mA
90
%
IL =50mA
91
%
IL = 100 mA
87
%
IL = 500 mA
88
%
IL = 1000 mA; pulsed
load current
82
%
Timing
fsw
switching frequency
PWM mode
475
560
645
kHz
fsync
sync input frequency
9
13
20
MHz
tres
response time from standby to Pmax
25
−µs


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