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P3C1041 ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 2 Page - Pyramid Semiconductor Corporation

๋ถ€ํ’ˆ๋ช… P3C1041
์ƒ์„ธ๋‚ด์šฉ  HIGH SPEED 256K x 16 (4 MEG) STATIC CMOS RAM
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์ œ์กฐ์‚ฌ  PYRAMID [Pyramid Semiconductor Corporation]
ํ™ˆํŽ˜์ด์ง€  http://www.pyramidsemiconductor.com
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P3C1041 ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 2 Page - Pyramid Semiconductor Corporation

 
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P3C1041
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Document # SRAM130 REV OR
MAXIMUM RATINGS(1)
Symbol
Parameter
Value
Unit
V
CC
Power Supply Pin with
โ€“0.5 to +4.6
V
Respect to GND
Terminal Voltage with
โ€“0.5 to
V
TERM
Respect to GND
V
CC +0.5
V
T
A
OperatingTemperature
โ€“55 to +125
ยฐC
Symbol
Parameter
Value
Unit
T
BIAS
TemperatureUnder
โ€“55 to +125
ยฐC
Bias
T
STG
StorageTemperature
โ€“65 to +150
ยฐC
I
OUT
DC Output Current
20
mA
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
I
SB
Standby Power Supply
Current (TTL Input Levels)
CE
โ‰ฅ V
IH
V
CC= Max,
f = Max., Outputs Open
V
IN โ‰ฅ VIH or VIN โ‰ค VIL
CE
โ‰ฅ V
CC - 0.2V
V
CC= Max,
f = 0, Outputs Open
V
IN โ‰ฅ VCC - 0.3V or
V
IN โ‰ค 0.3V
Standby Power Supply
Current
(CMOS Input Levels)
I
SB1
Industrial
Grade(2)
Ambient
Temperature
GND
V
CC
0V
0V
3.3V ยฑ 0.3V
3.3V ยฑ 0.3V
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Output Capacitance
Conditions
V
IN = 0V
V
OUT = 0V
8
8
Unit
pF
pF
CAPACITANCES(4)
V
CC = 3.3V, TA = 25ยฐC, f = 1.0MHz
Symbol
DC ELECTRICAL CHARACTERISTICS
Over recommended operating temperature and supply voltage(2)
V
IH
I
LI
I
LO
Parameter
Input High Voltage
Input Low Voltage
Input Leakage Current
Test Conditions
V
CC = Max.
V
IN = GND to VCC
V
CC = Max.,
CE = V
IH,
V
OUT = GND to VCC
Typ.
Commercial
โ€“40ยฐC to +85ยฐC
0ยฐC to +70ยฐC
Unit
V
V
ยตA
ยตA
mA
mA
V
OL
Output Low Voltage
(TTL Load)
I
OL = +8 mA, VCC = Min.
V
Output High Voltage
(TTL Load)
V
OH
I
OH = โ€“4 mA, VCC = Min.
V
Output Leakage Current
P3C1041
___
40
10
___
Min
2.0
โ€“0.3(3)
-1
-1
Max
V
CC +0.3
0.8
+1
+1
0.4
2.4
V
IL


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