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P4C163 데이터시트(PDF) 3 Page - Pyramid Semiconductor Corporation

부품명 P4C163
상세설명  ULTRA HIGH SPEED 8K x 9 STATIC CMOS RAMS
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제조업체  PYRAMID [Pyramid Semiconductor Corporation]
홈페이지  http://www.pyramidsemiconductor.com
Logo PYRAMID - Pyramid Semiconductor Corporation

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P4C163/163L
Page 3 of 12
Document # SRAM120 REV C
POWER DISSIPATION CHARACTERISTICS
Over recommended operating temperature and supply voltage(2)
P4C163
P4C163L
Min
Max
Min
Max
I
CC
Dynamic Operating
V
CC = Max., f = Max.,
Mil.
145
145
mA
Current – 25
Outputs Open
Com’l.
125
N/A
I
CC
Dynamic Operating
V
CC = Max., f = Max.,
Mil.
120
120
mA
Current – 35, 45
Outputs Open
Com’l.
95
N/A
I
SB
Standby Power Supply
CE
1 ≥ VIH or
Mil.
40
40
mA
Current (TTL Input Levels) CE
2 ≤ VIL, VCC = Max.,
Com’l.
35
N/A
f = Max., Outputs Open
I
SB1
Standby Power Supply
CE
1 ≥ VHC or
Mil.
20
1
mA
Current
CE
2 ≤ VLC, VCC = Max.,
Com’l.
18
N/A
(CMOS Input Levels)
f = 0, Outputs Open,
V
IN ≤ VLC or VIN ≥ VHC
DATA RETENTION WAVEFORM
Symbol
Parameter
Test Conditions
Unit
n/a = Not Applicable
DATA RETENTION CHARACTERISTICS (P4C163L, Military Temperature Only)
Typ.*
Max
Symbol
Parameter
Test Condition
Min
V
CC=VCC=Unit
2.0V
3.0V
2.0V
3.0V
V
DR
V
CC for Data Retention
2.0
V
I
CCDR
Data Retention Current
10
15
200
300
µA
t
CDR
Chip Deselect to
0
ns
Data Retention Time
t
R
Operation Recovery Time
t
RC
§
ns
*T
A = +25°C
§
t
RC = Read Cycle Time
This parameter is guaranteed but not tested.
CE
1 ≥ VCC – 0.2V or
CE
2 ≤ 0.2V, VIN ≥ VCC – 0.2V
or V
IN ≤ 0.2V


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