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ISB-E48-0 데이터시트(HTML) 2 Page - Sanyo Semicon Device

부품명 ISB-E48-0
상세내용  Ultrathin Miniature Package Charger Circuit Voltage Sensor 3 P-channel MOSFETs
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제조사  SANYO [Sanyo Semicon Device]
홈페이지  http://www.ssdc-jp.com/eng/
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ISB-E48-0 데이터시트(HTML) 2 Page - Sanyo Semicon Device

   
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ISB-E48-0, ISB-E48-1
No.0006-2/6
Specifications
Absolute Maximum Ratings at Ta = 25
°C
Internal Device
Parameter
Symbol
Conditions
Ratings
Unit
Input voltage
VIN
12
V
Output current
IOUT
50
mA
Output voltage
VOUT
VSS-0.3 to VIN+0.3
V
IC
Allowable power dissipation
PD-IC
When mounted on a specified board *
0.65
W
Drain-to-source voltage
VDSS
-20
V
Gate-to-source voltage
VGSS
±10
V
Drain current
ID
-2.0
A
TR1
Allowable power dissipation
PD-T
When mounted on a specified board *
1.4
W
Drain-to-source voltage
VDSS
-20
V
Gate-to-source voltage
VGSS
±10
V
Drain current
ID
-4
A
TR2 and TR3
Allowable power dissipation
PD-T
When mounted on a specified board *
1.5
W
Operating ambient temperature
Topr
-30 to +85
°C
Storage ambient temperature
Tstg
-40 to +125
°C
* Specified board: 40mm
×25mm×0.8mm FR4 board
Electrical Characteristics
Overall Operating Characteristics at Ta = 25
°C, with a dedicated test circuit
Ratings
Internal Device
Parameter
Symbol
Conditions
min
typ
max
Unit
ISB-E48-0
2.646
2.7
2.754
V
Detecting voltage
VDF
ISB-E48-1
3.234
3.3
3.366
V
Current consumption
ISS
VIN=3.0V
0.9
3.0
µA
ISB-E48-0
NchVDS=0.5V,VIN=2.0V
3.0
7.7
mA
IOUT1
ISB-E48-1
NchVDS=0.5V,VIN=3.0V
5.0
10.1
mA
IC
Output current
IOUT2
PchVDS=2.1V, VIN=8.0V
-10.0
-2.0
mA
Drain-to-source breakdown voltage
VDSS
ID=-1mA, VGS=0V
-20
V
Drain-to-source cutoff current
IDSS
VDS=-20V, VGS=0V
-10
µA
Gate-to-source leakage current
IGSS
VGS=±8V, VDS=0V
±10
µA
Gate-to-source cutoff voltage
VGS(off)
VDS=-10V, ID=-1mA
-0.3
-1.0
V
RDS(on)1
ID=-1A, VGS=-4V
125
165
m
RDS(on)2
ID=-0.5A, VGS=-2.5V
155
220
m
TR1
Drain-to-source on resistance
RDS(on)3
ID=-0.1A, VGS=-1.8V
195
280
m
Drain-to-source breakdown voltage
VDSS
ID=-1mA, VGS=0V
-20
V
Drain-to-source cutoff current
IDSS
VDS=-20V, VGS=0V
-1.0
µA
Gate-to-source leakage current
IGSS
VGS=±8V, VDS=0V
±10
µA
Gate-to-source cutoff voltage
VGS(off)
VDS=-10V, ID=-1mA
-0.4
-1.3
V
RDS(on)1
ID=-2A, VGS=-4.5V
* Design guaranteed value
63
m
TR2 and TR3
Drain-to-source on resistance
RDS(on)2
ID=-1A, VGS=-2.5V
* Design guaranteed value
96
m


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