전자부품 데이터시트 검색엔진 |
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ISB-E48-0 데이터시트(PDF) 2 Page - Sanyo Semicon Device |
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ISB-E48-0 데이터시트(HTML) 2 Page - Sanyo Semicon Device |
2 / 6 page ISB-E48-0, ISB-E48-1 No.0006-2/6 Specifications Absolute Maximum Ratings at Ta = 25 °C Internal Device Parameter Symbol Conditions Ratings Unit Input voltage VIN 12 V Output current IOUT 50 mA Output voltage VOUT VSS-0.3 to VIN+0.3 V IC Allowable power dissipation PD-IC When mounted on a specified board * 0.65 W Drain-to-source voltage VDSS -20 V Gate-to-source voltage VGSS ±10 V Drain current ID -2.0 A TR1 Allowable power dissipation PD-T When mounted on a specified board * 1.4 W Drain-to-source voltage VDSS -20 V Gate-to-source voltage VGSS ±10 V Drain current ID -4 A TR2 and TR3 Allowable power dissipation PD-T When mounted on a specified board * 1.5 W Operating ambient temperature Topr -30 to +85 °C Storage ambient temperature Tstg -40 to +125 °C * Specified board: 40mm ×25mm×0.8mm FR4 board Electrical Characteristics Overall Operating Characteristics at Ta = 25 °C, with a dedicated test circuit Ratings Internal Device Parameter Symbol Conditions min typ max Unit ISB-E48-0 2.646 2.7 2.754 V Detecting voltage VDF ISB-E48-1 3.234 3.3 3.366 V Current consumption ISS VIN=3.0V 0.9 3.0 µA ISB-E48-0 NchVDS=0.5V,VIN=2.0V 3.0 7.7 mA IOUT1 ISB-E48-1 NchVDS=0.5V,VIN=3.0V 5.0 10.1 mA IC Output current IOUT2 PchVDS=2.1V, VIN=8.0V -10.0 -2.0 mA Drain-to-source breakdown voltage VDSS ID=-1mA, VGS=0V -20 V Drain-to-source cutoff current IDSS VDS=-20V, VGS=0V -10 µA Gate-to-source leakage current IGSS VGS=±8V, VDS=0V ±10 µA Gate-to-source cutoff voltage VGS(off) VDS=-10V, ID=-1mA -0.3 -1.0 V RDS(on)1 ID=-1A, VGS=-4V 125 165 m Ω RDS(on)2 ID=-0.5A, VGS=-2.5V 155 220 m Ω TR1 Drain-to-source on resistance RDS(on)3 ID=-0.1A, VGS=-1.8V 195 280 m Ω Drain-to-source breakdown voltage VDSS ID=-1mA, VGS=0V -20 V Drain-to-source cutoff current IDSS VDS=-20V, VGS=0V -1.0 µA Gate-to-source leakage current IGSS VGS=±8V, VDS=0V ±10 µA Gate-to-source cutoff voltage VGS(off) VDS=-10V, ID=-1mA -0.4 -1.3 V RDS(on)1 ID=-2A, VGS=-4.5V * Design guaranteed value 63 m Ω TR2 and TR3 Drain-to-source on resistance RDS(on)2 ID=-1A, VGS=-2.5V * Design guaranteed value 96 m Ω |
유사한 부품 번호 - ISB-E48-0 |
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유사한 설명 - ISB-E48-0 |
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