BDW83, BDW83A, BDW83B, BDW83C, BDW83D

NPN SILICON POWER DARLINGTONS

PRODUCT

INFORMATION

1

AUGUST 1978 - REVISED MARCH 1997

Copyright © 1997, Power Innovations Limited, UK

Information is current as of publication date. Products conform to specifications in accordance

with the terms of Power Innovations standard warranty. Production processing does not

necessarily include testing of all parameters.

q

Designed for Complementary Use with

BDW84, BDW84A, BDW84B, BDW84C and

BDW84D

q

150 W at 25°C Case Temperature

q

15 A Continuous Collector Current

q

SOT-93 PACKAGE

(TOP VIEW)

Pin 2 is in electrical contact with the mounting base.

MDTRAA

B

C

E

1

2

3

absolute maximum ratings

at 25°C case temperature (unless otherwise noted)

NOTES: 1. These values apply when the base-emitter diode is open circuited.

2. Derate linearly to 150°C case temperature at the rate of 1.2 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.

RATING

SYMBOL

VALUE

UNIT

BDW83

BDW83A

BDW83B

BDW83C

BDW83D

45

60

80

100

120

V

BDW83

BDW83A

BDW83B

BDW83C

BDW83D

45

60

80

100

120

V

Emitter-base voltage

5

V

Continuous collector current

15

A

Continuous base current

0.5

A

Continuous device dissipation at (or below) 25°C case temperature (see Note 2)

150

W

Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)

3.5

W

Unclamped inductive load energy (see Note 4)

2

100

mJ

Operating junction temperature range

-65 to +150

°C

Operating temperature range

-65 to +150

°C

Operating free-air temperature range

-65 to +150

°C