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BU406 데이터시트(PDF) 2 Page - Power Innovations Ltd |
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BU406 데이터시트(HTML) 2 Page - Power Innovations Ltd |
2 / 7 page BU406, BU407 NPN SILICON POWER TRANSISTORS 2 AUGUST 1978 - REVISED MARCH 1997 PRODUCT INFORMATION NOTES: 2. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 3. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. 4. To obtain ft the [hFE] response is extrapolated at the rate of -6 dB per octave from f = 1 MHz to the frequency at which [hFE] = 1. † Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC = 30 mA IB = 0 140 V ICES Collector-emitter cut-off current VCE = 400 V VCE = 330 V VCE = 250 V VCE = 200 V VCE = 250 V VCE = 200 V VBE = 0 VBE = 0 VBE = 0 VBE = 0 VBE = 0 VBE = 0 TC = 150°C TC = 150°C BU406 BU407 BU406 BU407 BU406 BU407 5 5 0.1 0.1 1 1 mA IEBO Emitter cut-off current VEB = 6 V IC = 0 1 mA hFE Forward current transfer ratio VCE = 10 V VCE = 10 V IC = 4 A IC = 0.5 A (see Notes 2 and 3) 12 20 VCE(sat) Collector-emitter saturation voltage IB = 0.5 A IC = 5 A (see Notes 2 and 3) 1 V VBE(sat) Base-emitter saturation voltage IB = 0.5 A IC = 5 A (see Notes 2 and 3) 1.2 V ft Current gain bandwidth product VCE = 5 V IC = 0.5 A f = 1 MHz (see Note 4) 6 MHz Cob Output capacitance VCB = 20 V IE = 0 f = 1 MHz 60 pF thermal characteristics PARAMETER MIN TYP MAX UNIT RθJC Junction to case thermal resistance 2.08 °C/W RθJA Junction to free air thermal resistance 70 °C/W inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS † MIN TYP MAX UNIT ts Storage time IC = 5 A IB(end) = 0.5A (see Figures 1 and 2) 2.7 µs t(off) Turn off time 750 ns |
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