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BU406 데이터시트(PDF) 2 Page - Power Innovations Ltd

부품명 BU406
상세설명  NPN SILICON POWER TRANSISTORS
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제조업체  POINN [Power Innovations Ltd]
홈페이지  http://www.bourns.com
Logo POINN - Power Innovations Ltd

BU406 데이터시트(HTML) 2 Page - Power Innovations Ltd

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BU406, BU407
NPN SILICON POWER TRANSISTORS
2
AUGUST 1978 - REVISED MARCH 1997
PRODUCT
INFORMATION
NOTES: 2. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
3. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
4. To obtain ft the [hFE] response is extrapolated at the rate of -6 dB per octave from f = 1 MHz to the frequency at which [hFE] = 1.
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V(BR)CEO
Collector-emitter
breakdown voltage
IC =
30 mA
IB = 0
140
V
ICES
Collector-emitter
cut-off current
VCE = 400 V
VCE = 330 V
VCE = 250 V
VCE = 200 V
VCE = 250 V
VCE = 200 V
VBE = 0
VBE = 0
VBE = 0
VBE = 0
VBE = 0
VBE = 0
TC = 150°C
TC = 150°C
BU406
BU407
BU406
BU407
BU406
BU407
5
5
0.1
0.1
1
1
mA
IEBO
Emitter cut-off
current
VEB =
6 V
IC = 0
1
mA
hFE
Forward current
transfer ratio
VCE =
10 V
VCE =
10 V
IC =
4 A
IC = 0.5 A
(see Notes 2 and 3)
12
20
VCE(sat)
Collector-emitter
saturation voltage
IB =
0.5 A
IC =
5 A
(see Notes 2 and 3)
1
V
VBE(sat)
Base-emitter
saturation voltage
IB =
0.5 A
IC =
5 A
(see Notes 2 and 3)
1.2
V
ft
Current gain
bandwidth product
VCE =
5 V
IC = 0.5 A
f = 1 MHz
(see Note 4)
6
MHz
Cob
Output capacitance
VCB =
20 V
IE = 0
f = 1 MHz
60
pF
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
RθJC
Junction to case thermal resistance
2.08
°C/W
RθJA
Junction to free air thermal resistance
70
°C/W
inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
ts
Storage time
IC = 5 A
IB(end) = 0.5A
(see Figures 1 and 2)
2.7
µs
t(off)
Turn off time
750
ns


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