MBR10H100CT datasheet(2/2 Pages) TSC

부품명	MBR10H100CT

상세설명	10.0 AMPS. Schottky Barrier Rectifiers

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제조업체	TSC [Taiwan Semiconductor Company, Ltd]

홈페이지	http://www.taiwansemi.com

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FIG.2- MAXIMUM NON-REPETITIVE FORWARD

SURGE CURRENT

1

10

100

180

150

120

90

60

30

0

NUMBER OF CYCLES AT 60Hz

FIG.4- TYPICAL REVERSE CHARACTERISTICS

0

20

40

60

80

100

120

140

PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)

0.0001

0.01

0.001

0.1

1

5

FIG.6- TYPICAL TRANSIENT THERMAL

CHARACTERISTICS PER LEG

1

0.01

0.1

10

100

0.1

10.0

1

100

T, PULSE DURATION. (sec)

FIG.5- TYPICAL JUNCTION CAPACITANCE

0.1

1.0

10

100

1,000

5,000

REVERSE VOLTAGE. (V)

Tj=25 C

f=1.0MHz

Vsig=50mVp-p

0

FIG.1- FORWARD CURRENT DERATING CURVE

0

50

125

150

12

10

8

6

4

2

0

CASE TEMPERATURE. ( C)

o

RESISTIVE OR

INDUCTIVE LOAD

RATINGS AND CHARACTERISTIC CURVES (MBR10H100CT THRU MBR10H200CT)

500

Tj=Tj max.

8.3ms Single Half Sine-Wave

JEDEC Method

Tj=75 C

0

Tj=125 C

0

Tj=25 C

0

Version: A07

FIG.3- TYPICAL FORWARD CHARACTERISTICS

0.6

0.8

1.0

1.2

1.4

0.1

10

100

FORWARD VOLTAGE. (V)

0.4

0.2

0

5

Tj=25 C

Pulse Width=300 s

1% Duty Cycle

o

1

25

75

100

175

Tj=125 C

0

Tj=25 C

0

유사한 부품 번호 - MBR10H100CT

제조업체	부품명	데이터시트	상세설명
Vaishali Semiconductor	MBR10H100CT	83Kb / 3P	MBR10H100CT, MBRF10H100CT & MBRB10H100CT Series
Vishay Siliconix	MBR10H100CT	154Kb / 6P	Dual Common Cathode High Voltage Schottky Rectifier Revision: 27-Jun-12
Vishay Siliconix	MBR10H100CT	78Kb / 3P	Dual High-Voltage Schottky Rectifiers 24-Apr-03
Taiwan Semiconductor Co...	MBR10H100CT	207Kb / 4P	Dual Common Cathode Schottky Rectifier
ON Semiconductor	MBR10H100CT	68Kb / 6P	SWITCHMODE Power Rectifier 100 V, 10 A June, 2005 ??Rev. 0

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유사한 설명 - MBR10H100CT

제조업체	부품명	데이터시트	상세설명
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MBR10H100CT 데이터시트(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

MBR10H100CT 데이터시트(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

유사한 부품 번호 - MBR10H100CT

유사한 설명 - MBR10H100CT

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