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MBRS20H100CT 데이터시트(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

부품명 MBRS20H100CT
부품 상세설명  20.0 AMPS. Surface Mount Schottky Barrier Rectifiers Switchmode Power Rectifiers
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제조업체  TSC [Taiwan Semiconductor Company, Ltd]
홈페이지  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

MBRS20H100CT 데이터시트(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

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Pb
RoHS
COMPLIANCE
RoHS
COMPLIANCE
MBRS20H100CT – MBRS20H200CT
20.0 AMPS. Surface Mount Schottky Barrier
Rectifiers
Switchmode Power Rectifiers
D
2PAK
Features
Plastic material used carries Underwriters
Laboratory Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in power supply – output rectification, power
management, instrumentation
Guardring for overvoltage protection
High temperature soldering guaranteed:
260
oC/10 seconds,0.25”(6.35mm)from case
Mechanical Data
Cases: D2PAK molded plastic
Terminals: Pure tin plated, lead free. solderable per
MIL-STD-750, Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.08 ounce, 2.24 grams
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol
MBRS
20H100CT
MBRS
20H150CT
MBRS
20H200CT
Units
Maximum Recurrent Peak Reverse Voltage
VRRM
100
150
200
V
Maximum RMS Voltage
VRMS
70
105
140
V
Maximum DC Blocking Voltage
VDC
100
150
200
V
Maximum Average Forward Rectified Current
at Tc=125
oC
I(AV)
20
A
Peak Repetitive Forward Current (Rated VR,
Square Wave, 20KHz) at Tc=125
oC
IFRM
20
A
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
method )
IFSM
150
A
Peak Repetitive Reverse Surge Current (Note 1)
IRRM
1.0
0.5
A
Maximum Instantaneous Forward Voltage at:
(Note 2)
IF=10A, TC=25
oC
IF=10A, TC=125
oC
IF=20A, TC=25
oC
IF=20A, TC=125
oC
VF
0.85
0.75
0.95
0.85
0.88
0.75
0.97
0.85
V
5
Maximum Instantaneous Reverse Current
@ Tc =25
oC at Rated DC Blocking Voltage
@ Tc=125
oC
(Note 2)
IR
2.0
uA
mA
Voltage Rate of Change (Rated VR)
dV/dt
10,000
V/uS
Maximum Typical Thermal Resistance (Note 3)
RθJC
1.5
oC/W
Operating Junction Temperature Range
TJ
-65 to +175
oC
Storage Temperature Range
TSTG
-65 to +175
oC
Notes:
1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Thermal Resistance from Junction to Case Per Leg, Mount on Heatsink Size of 2 in x 3 in x 0.25in
Al-Plate.
Version: A07


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