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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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ES2G 데이터시트(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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ES2G 데이터시트(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 2 page  - 216 - .082(2.08) .076(1.93) .012(.31) .006(.15) .012(.31) .006(.15) .008(.20) .004(.10) .056(1.41) .035(0.90) .147(3.73) .137(3.48) .187(4.75) .167(4.25) .103(2.61) .078(1.99) .208(5.28) .200(5.08) ES2A THRU ES2J 2.0 AMPS. Super Fast Surface Mount Rectifiers Voltage Range 50 to 600 Volts Current 2.0 Amperes Features Glass passivated junction chip For surface mounted application Low profile package Built-in strain relief Ideal for automated placement Easy pick and place Superfast recovery time for high efficiency Glass passivated chip junction High temperature soldering: 260 OC/10 seconds at terminals Plastic material used carries Underwriters Laboratory Classification 94V-O Mechanical Data Cases: Molded plastic Terminals: Solder plated Polarity: Indicated by cathode band Packing: 12mm tape per E1A STD RS-481 Weight: 0.093 gram SMB/DO-214AA Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25 ℃ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Symbol ES 2A ES 2B ES 2C ES 2D ES 2F ES 2G ES 2H ES 2J Units Maximum Recurrent Peak Reverse Voltage VRRM 50 100 150 200 300 400 500 600 V Maximum RMS Voltage VRMS 35 70 105 140 210 280 350 420 V Maximum DC Blocking Voltage VDC 50 100 150 200 300 400 500 600 V Maximum Average Forward Rectified Current See Fig. 1 I(AV) 2.0 A Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) IFSM 50 A Maximum Instantaneous Forward Voltage @ 2.0A VF 0.95 1.3 1.7 V Maximum DC Reverse Current @TA =25 ℃ at Rated DC Blocking Voltage @ TA=100 ℃ IR 10 350 uA uA Maximum Reverse Recovery Time ( Note 1 ) Trr 35 nS Typical Junction Capacitance ( Note 2 ) Cj 25 20 pF Maximum Thermal Resistance (Note 3) R θJA R θJL 75 20 ℃/W Operating Temperature Range TJ -55 to +150 ℃ Storage Temperature Range TSTG -55 to + 150 ℃ Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A 2. Measured at 1 MHz and Applied VR=4.0 Volts 3. Units Mounted on P.C.B. 0.4 x 0.4" (10 x 10mm) Pad Areas |
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